Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction

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Details zur Publikation

Autorinnen und Autoren: Gröschel A, Will J, Bergmann C, Magerl A
Zeitschrift: Journal of Applied Physics
Verlag: AMER INST PHYSICS
Jahr der Veröffentlichung: 2014
Band: 115
Heftnummer: 23
ISSN: 0021-8979


Abstract


Annealed Czochralski Silicon wafers containing SiOx precipitates have been studied by high energy X-ray diffraction in a defocused Laue setup using a laboratory tungsten tube. The energy dispersive evaluation of the diffracted Bragg intensity of the 220 reflection within the framework of the statistical dynamical theory yields the static Debye-Waller factor E of the crystal, which gives access to the strain induced by the SiOx precipitates. The results are correlated with precipitate densities and sizes determined from transmission electron microscopy measurements of equivalent wafers. This allows for the determination of the constrained linear misfit epsilon between precipitate and crystal lattice. For samples with octahedral precipitates the values ranging from epsilon=0.39 (+0.28/-0.12) to epsilon=0.48 (+0.34/-0.16) indicate that self-interstitials emitted into the matrix during precipitate growth contribute to the lattice strain. In this case, the expected value calculated from literature values is epsilon=0.26 +/- 0.05. Further, the precise evaluation of Pendellosung oscillations in the diffracted Bragg intensity of as-grown wafers reveals a thermal Debye-Waller parameter for the 220 reflection B-220(293 K) of 0.5582 +/- 0.0039 angstrom(2) for a structure factor based on spherically symmetric scattering contributions. (C) 2014 AIP Publishing LLC.



FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

Bergmann, Christoph
Lehrstuhl für Kristallographie und Strukturphysik
Gröschel, Alexander
Lehrstuhl für Kristallographie und Strukturphysik
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Will, Johannes Dr.
Lehrstuhl für Kristallographie und Strukturphysik


Zitierweisen

APA:
Gröschel, A., Will, J., Bergmann, C., & Magerl, A. (2014). Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction. Journal of Applied Physics, 115(23). https://dx.doi.org/10.1063/1.4883998

MLA:
Gröschel, Alexander, et al. "Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction." Journal of Applied Physics 115.23 (2014).

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