In-Situ observation of the oxygen nucleation in silicon with X-Ray single crystal diffraction

Will J, Gröschel A, Bergmann C, Magerl A (2011)

Publication Status: Published

Publication Type: Conference contribution

Publication year: 2011

Journal

Solid State Phenomena Trans Tech Publications

Book Volume: 178-179

Pages Range: 353-359

DOI: 10.4028/www.scientific.net/SSP.178-179.353

Abstract

The measurement of Pendellosungs oscillations was used to observe the time dependent nucleation of oxygen in a Czochralski grown single crystal at 750 degrees C. It is shown, that the theoretical approach of the statistical dynamical theory describes the data well. Within the framework of this theory it is possible to determine the static Debye-Waller-factor as a function of the annealing time by evaluating the mean value of the Bragg intensity and the period length. The temperature influence on the Pendellosungs distance was corrected for by measurement of a Float-zone sample at the same temperature.

Authors with CRIS profile

Johannes Will Lehrstuhl für Kristallographie und Strukturphysik Alexander Gröschel Lehrstuhl für Kristallographie und Strukturphysik Christoph Bergmann Lehrstuhl für Kristallographie und Strukturphysik Andreas Magerl Lehrstuhl für Kristallographie und Strukturphysik

How to cite

APA:

Will, J., Gröschel, A., Bergmann, C., & Magerl, A. (2011). In-Situ observation of the oxygen nucleation in silicon with X-Ray single crystal diffraction. (pp. 353-359).

MLA:

Will, Johannes, et al. "In-Situ observation of the oxygen nucleation in silicon with X-Ray single crystal diffraction." 2011. 353-359.

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