Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction

Journal article


Publication Details

Author(s): Will J, Gröschel A, Bergmann C, Weißer M, Magerl A
Journal: Applied Physics Letters
Publisher: AMER INST PHYSICS
Publication year: 2014
Volume: 105
Journal issue: 11
ISSN: 0003-6951


Abstract


The oxygen precipitation of highly (17.5 m Omega cm) and moderately (4.5 Omega cm) boron (B) doped silicon (Si) crystals at 780 degrees C is investigated by following in-situ the evolution of diffraction Pendellosung oscillations. All samples show an initial diffusion-driven growth process which may change over into Ostwald ripening. For the highly doped sample and involving a nucleation step at 450 degrees C for 30 h, the precipitate density rho is enhanced by a factor of 8 as compared to the moderately doped sample. The influence of a high B concentration on rho is dramatically higher for the samples directly heated to 780 degrees C, where an enhancement factor of 80 is found. Considering Ostwald ripening as a second growth regime reveals consistent ripening rates and surface energies sigma with those found at 900 degrees C in a previous publication. (c) 2014 AIP Publishing LLC.



FAU Authors / FAU Editors

Bergmann, Christoph
Lehrstuhl für Kristallographie und Strukturphysik
Gröschel, Alexander
Lehrstuhl für Kristallographie und Strukturphysik
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Weißer, Matthias Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Will, Johannes Dr.
Lehrstuhl für Kristallographie und Strukturphysik


How to cite

APA:
Will, J., Gröschel, A., Bergmann, C., Weißer, M., & Magerl, A. (2014). Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction. Applied Physics Letters, 105(11). https://dx.doi.org/10.1063/1.4896184

MLA:
Will, Johannes, et al. "Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction." Applied Physics Letters 105.11 (2014).

BibTeX: 

Last updated on 2018-11-08 at 02:11