Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks

Hinz J, Bauer AJ, Thiede T, Fischer RA, Frey L (2010)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2010

Journal

Semiconductor Science and Technology Institute of Physics: Hybrid Open Access

Book Volume: 25

Article Number: 045009

Journal Issue: 4

DOI: 10.1088/0268-1242/25/4/045009

Abstract

NbN was deposited by plasma-enhanced ALD (atomic layer deposition) as well as MOCVD (metal organic chemical vapour deposition) as gate electrode for MOS capacitors with SiO2 and HfO2 as dielectric. Finally, different contact materials were deposited on the NbN electrodes and the gate stacks were annealed. Dependent on the applied dielectric and the composition of the contact materials, variation in work function, increase in EOT, and even oxide degradation occurs after thermal treatment. This can be related to chemical reactions due to interdiffusion between the NbN gate electrode, the contact material and the gate dielectric. Employing PEALD (plasma-enhanced atomic layer deposition) for NbN electrode deposition on HfO2 and poly-Si as contact material, however, degradation can be significantly reduced and the work function remains stable at 4.8 eV. This makes NbN deposited by PEALD an attractive gate electrode material for future low power consuming PMOS-transistors.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Ruhr-Universität Bochum (RUB) DE Germany (DE)

How to cite

APA:

Hinz, J., Bauer, A.J., Thiede, T., Fischer, R.A., & Frey, L. (2010). Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks. Semiconductor Science and Technology, 25(4). https://doi.org/10.1088/0268-1242/25/4/045009

MLA:

Hinz, J., et al. "Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks." Semiconductor Science and Technology 25.4 (2010).

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