Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques

Rommel M, Spoldi G, Yanev V, Beuer S, Amon B, Jambreck J, Petersen S, Bauer AJ, Frey L (2010)


Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2010

Journal

Publisher: AVS Science and Technology Society

Book Volume: 28

Pages Range: 595-607

Journal Issue: 3

DOI: 10.1116/1.3431085

Authors with CRIS profile

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How to cite

APA:

Rommel, M., Spoldi, G., Yanev, V., Beuer, S., Amon, B., Jambreck, J.,... Frey, L. (2010). Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 28(3), 595-607. https://dx.doi.org/10.1116/1.3431085

MLA:

Rommel, Mathias, et al. "Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques." Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 28.3 (2010): 595-607.

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