Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy

Hauck M, Weiße J, Lehmeyer J, Pobegen G, Weber HB, Krieger M (2016)

Publication Language: English

Publication Type: Book chapter / Article in edited volumes

Publication year: 2016

Edited Volumes: Materials Science Forum

DOI: 10.4028/www.scientific.net/MSF.897.111

Authors with CRIS profile

Martin Hauck Chair of Applied Physics Julietta Förthner Chair of Applied Physics Johannes Lehmeyer Chair of Applied Physics Heiko Weber Chair of Applied Physics Michael Krieger Chair of Applied Physics

How to cite

APA:

Hauck, M., Weiße, J., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2016). Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy. In Materials Science Forum..

MLA:

Hauck, Martin, et al. "Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy." Materials Science Forum. 2016.

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