From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

Journal article
(Original article)


Publication Details

Author(s): La Via F, Severino A, Anzalone R, Bongiorno C, Litrico G, Mauceri M, Schöler M, Schuh P, Wellmann P
Journal: Materials Science in Semiconductor Processing
Publisher: Elsevier Ltd
Publication year: 2018
Volume: 78
Pages range: 57-68
ISSN: 1369-8001


Abstract


In this review the effect of the growth process on the formation of defects in the hetero-epitaxial 3C-SiC film and the possible path for defects reduction has been reported. In our analysis of the experimental data we started from the realization of the carbonization layer, the defects at the interface and in the silicon substrate, to the growth of thin and even very thick layers. The discussion has been focalized on the growth on planar blanket Si substrates without the presence of structures or specific buffer layers. Both Chemical Vapour Deposition (CVD)

and Sublimation Epitaxy (SE) processes have been reported and studied in detail.



FAU Authors / FAU Editors

Schöler, Michael
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Schuh, Philipp
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

CNR Institute for Microelectronics and Microsystems (CNR-IMM)
E.T.C. (LPE Spa - Epitaxial Technology Center)
STMicroelectronics N.V.


How to cite

APA:
La Via, F., Severino, A., Anzalone, R., Bongiorno, C., Litrico, G., Mauceri, M.,... Wellmann, P. (2018). From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction. Materials Science in Semiconductor Processing, 78, 57-68. https://dx.doi.org/10.1016/j.mssp.2017.12.012

MLA:
La Via, F., et al. "From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction." Materials Science in Semiconductor Processing 78 (2018): 57-68.

BibTeX: 

Last updated on 2019-01-01 at 21:10