Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC

Journal article
(Original article)


Publication Details

Author(s): Weingärtner R, Bickermann M, Herro ZG, Künecke U, Sakwe A, Wellmann P, Winnacker A
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publishing place: Switzerland
Publication year: 2003
Volume: 433-436
Conference Proceedings Title: Materials Science Forum (Volumes 433-436)
Pages range: 333-336
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


We present an optical method for the determination of the charge carrier concentration as well as the compensation level based on absorption measurements at room temperature in n-type 6H-SiC. Below band-gap absorption bands (BBGA) are best fitted by a Fano like shape. Calibration plots are provided for evaluation of the charge carrier concentration from the peak area of the BBGA. The compensation level is derived from the comparison of the peak area of the BBGA and the absolute peak value.


FAU Authors / FAU Editors

Bickermann, Matthias PD Dr.
Technische Fakultät
Künecke, Ulrike Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Winnacker, Albrecht Prof. Dr.
Technische Fakultät


How to cite

APA:
Weingärtner, R., Bickermann, M., Herro, Z.G., Künecke, U., Sakwe, A., Wellmann, P., & Winnacker, A. (2003). Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC. Materials Science Forum, 433-436, 333-336. https://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.333

MLA:
Weingärtner, Roland, et al. "Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC." Materials Science Forum 433-436 (2003): 333-336.

BibTeX: 

Last updated on 2018-18-09 at 13:46