Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC

Weingärtner R, Bickermann M, Herro ZG, Künecke U, Sakwe A, Wellmann P, Winnacker A (2003)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2003

Journal

Publisher: Trans Tech Publications

City/Town: Switzerland

Book Volume: 433-436

Pages Range: 333-336

Conference Proceedings Title: Materials Science Forum (Volumes 433-436)

Event location: Linkoping SE

DOI: 10.4028/www.scientific.net/MSF.433-436.333

Abstract

We present an optical method for the determination of the charge carrier concentration as well as the compensation level based on absorption measurements at room temperature in n-type 6H-SiC. Below band-gap absorption bands (BBGA) are best fitted by a Fano like shape. Calibration plots are provided for evaluation of the charge carrier concentration from the peak area of the BBGA. The compensation level is derived from the comparison of the peak area of the BBGA and the absolute peak value.

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How to cite

APA:

Weingärtner, R., Bickermann, M., Herro, Z.G., Künecke, U., Sakwe, A., Wellmann, P., & Winnacker, A. (2003). Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC. Materials Science Forum, 433-436, 333-336. https://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.333

MLA:

Weingärtner, Roland, et al. "Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC." Materials Science Forum 433-436 (2003): 333-336.

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