Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers

Schuh P, Schöler M, Wilhelm M, Syväjärvi M, Litrico G, La Via F, Mauceri M, Wellmann P (2017)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2017

Journal

Publisher: Elsevier B.V.

Book Volume: 478

Pages Range: 159-162

DOI: 10.1016/j.jcrysgro.2017.09.002

Abstract

We have developed a transfer process of 3C-SiC-on-Si (1 0 0) seeding layers grown by chemical vapor deposition onto a poly- or single-crystalline SiC carrier. Applying subsequent sublimation growth of SiC in [1 0 0] direction resulting in large area crystals (up to ≈11 cm²) with a thickness of up to approximately 850 m. Raman spectroscopy, Laue X-ray diffraction and electron-backscattering-diffraction revealed a high material quality in terms of single-crystallinity without secondary polytype inclusions, antiphase boundaries or double positioning grain boundaries. Defects in the bulk grown 3C-SiC, like protrusions with surrounding stressed areas, stem from the epitaxial seeding layer. The presented concept using 3C-SiC-on-Si seeding layers reveals a path for the growth of bulk 3C-SiC crystals.

Authors with CRIS profile

Involved external institutions

Linköping University Sweden (SE) CNR Institute for Microelectronics and Microsystems (CNR-IMM) Italy (IT) E.T.C. (LPE Spa - Epitaxial Technology Center) Italy (IT)

How to cite

APA:

Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2017). Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers. Journal of Crystal Growth, 478, 159-162. https://dx.doi.org/10.1016/j.jcrysgro.2017.09.002

MLA:

Schuh, Philipp, et al. "Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers." Journal of Crystal Growth 478 (2017): 159-162.

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