Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers

Journal article
(Original article)


Publication Details

Author(s): Schuh P, Schöler M, Wilhelm M, Syväjärvi M, Litrico G, La Via F, Mauceri M, Wellmann P
Journal: Journal of Crystal Growth
Publisher: Elsevier B.V.
Publication year: 2017
Volume: 478
Pages range: 159-162
ISSN: 0022-0248
Language: English


Abstract


We have developed a transfer process of 3C-SiC-on-Si (1 0 0) seeding layers grown by chemical vapor deposition onto a poly- or single-crystalline SiC carrier. Applying subsequent sublimation growth of SiC in [1 0 0] direction resulting in large area crystals (up to ≈11 cm2) with a thickness of up to approximately 850 m. Raman spectroscopy, Laue X-ray diffraction and electron-backscattering-diffraction revealed a high material quality in terms of single-crystallinity without secondary polytype inclusions, antiphase boundaries or double positioning grain boundaries. Defects in the bulk grown 3C-SiC, like protrusions with surrounding stressed areas, stem from the epitaxial seeding layer. The presented concept using 3C-SiC-on-Si seeding layers reveals a path for the growth of bulk 3C-SiC crystals.



FAU Authors / FAU Editors

Schöler, Michael
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Schuh, Philipp
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Wilhelm, Martin
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


External institutions with authors

CNR Institute for Microelectronics and Microsystems (CNR-IMM)
E.T.C. (LPE Spa - Epitaxial Technology Center)
Linköping University


How to cite

APA:
Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2017). Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers. Journal of Crystal Growth, 478, 159-162. https://dx.doi.org/10.1016/j.jcrysgro.2017.09.002

MLA:
Schuh, Philipp, et al. "Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers." Journal of Crystal Growth 478 (2017): 159-162.

BibTeX: 

Last updated on 2018-01-10 at 14:50