Mapping interfacial excess in atom probe data

Felfer P, Scherrer B, Demeulemeester J, Vandervorst W, Cairney JM (2015)

Publication Status: Published

Publication Type: Conference contribution

Publication year: 2015

Journal

Ultramicroscopy Elsevier

Publisher: Elsevier

Book Volume: 159

Pages Range: 438-444

DOI: 10.1016/j.ultramic.2015.06.002

Abstract

Using modern wide-angle atom probes, it is possible to acquire atomic scale 3D data containing 1000 s of nm(2) of interfaces. It is therefore possible to probe the distribution of segregated species across these interfaces. Here, we present techniques that allow the production of models for interfacial excess (IE) mapping and discuss the underlying considerations and sampling statistics. We also show, how the same principles can be used to achieve thickness mapping of thin films. We demonstrate the effectiveness on example applications, including the analysis of segregation to a phase boundary in stainless steel, segregation to a metal-ceramic interface and the assessment of thickness variations of the gate oxide in a fin-FET. (C) 2015 Elsevier B.V. All rights reserved.

Authors with CRIS profile

Peter Felfer Professur für Atom Probe Tomography

Additional Organisation(s)

Lehrstuhl für Werkstoffwissenschaften (Allgemeine Werkstoffeigenschaften)

Involved external institutions

University of Sydney (USYD) AU Australia (AU) Interuniversity Microelectronics Centre (IMEC) BE Belgium (BE)

How to cite

APA:

Felfer, P., Scherrer, B., Demeulemeester, J., Vandervorst, W., & Cairney, J.M. (2015). Mapping interfacial excess in atom probe data. (pp. 438-444). Elsevier.

MLA:

Felfer, Peter, et al. "Mapping interfacial excess in atom probe data." Elsevier, 2015. 438-444.

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