Understanding GaN/InGaN core-shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods.

Journal article
(Original article)


Publication Details

Author(s): Tessarek C, Rechberger S, Dieker C, Heilmann M, Spiecker E, Christiansen SH
Journal: Nanotechnology
Publication year: 2017
Volume: 28
Journal issue: 48
Pages range: 485601
ISSN: 1361-6528


Abstract


GaN microrods are used as a basis for subsequent InGaN quantum well (QW) and quantum dot deposition by metal-organic vapor phase epitaxy. The coverage of the shell along the sidewall of rods is dependent on the rod growth time and a complete coverage is obtained for shorter rod growth times. Transmission electron microscopy measurements are performed to reveal the structural properties of the InGaN layer on the sidewall facet and on the top facet. The presence of layers in the microrod and on the microrod surface will be discussed with respect to GaN and InGaN growth. A detailed model will be presented explaining the formation of multiple SiN layers and the partial and full coverage of the shell around the core. Cathodoluminescence measurements are performed to analyze the InGaN emission properties along the microrod and to study the microresonator properties of such hexagonal core-shell structures. High quality factor whispering gallery modes with [Formula: see text] are reported for the first time in a GaN microrod/InGaN non-polar QW core-shell geometry. The GaN/InGaN core-shell microrods are expected to be promising building blocks for low-threshold laser diodes and ultra-sensitive optical sensors.



FAU Authors / FAU Editors

Dieker, Christel
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Heilmann, Martin
Lehrstuhl für Experimentalphysik (Optik)
Rechberger, Stefanie Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Spiecker, Erdmann Prof. Dr.
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)


Additional Organisation
Graduiertenkolleg 1896/2 In situ Mikroskopie mit Elektronen, Röntgenstrahlen und Rastersonden
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)


External institutions with authors

Helmholtz-Zentrum Berlin für Materialien und Energie (HZB)
Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light


How to cite

APA:
Tessarek, C., Rechberger, S., Dieker, C., Heilmann, M., Spiecker, E., & Christiansen, S.H. (2017). Understanding GaN/InGaN core-shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods. Nanotechnology, 28(48), 485601. https://dx.doi.org/10.1088/1361-6528/aa9050

MLA:
Tessarek, Christian, et al. "Understanding GaN/InGaN core-shell growth towards high quality factor whispering gallery modes from non-polar InGaN quantum wells on GaN rods." Nanotechnology 28.48 (2017): 485601.

BibTeX: 

Last updated on 2019-29-05 at 08:22