Equilibrium and non-equilibrium atomic scale characterization of metal contacts on epitaxial graphene

Third Party Funds Group - Sub project

Overall project details

Overall project: SPP 1459: Graphene

Overall project speaker:
PD Dr. Thomas Seyller (Lehrstuhl für Laserphysik)

Project Details

Project leader:
Prof. Dr. Alexander Schneider

Contributing FAU Organisations:
Professur für Experimentalphysik

Funding source: DFG / Schwerpunktprogramm (SPP)
Start date: 01/10/2010
End date: 31/10/2016

Short description (intelligible to all):

The properties of metal contacts and their influence on the structural, electronic and transport properties of graphene is of great importance for further development of graphene based electronic devices and sensors. In this project low-temperature ultra-high-vacuum Scanning Tunneling Microscopy (STM) and Spectroscopy will be used to study the interface between different metals and epitaxial graphene layers grown on silicon carbide (SiC) single crystals at the atomic scale. The project aims at investigating electron transport across a metal/graphene interface by Ballistic Emission Electron Microscopy (BEEM), Kelvin Probe Force Microscopy (KPFM), and Scanning Tunnelling Potentiometry (STP). With the latter two methods also electron transport in the graphene layer will be studied. These experiments will lead to a microscopic picture of how contact resistances develop and what properties of the graphene and of associated interfaces (metal/graphene and graphene/substrate) influence electron transport on the atomic scale. The properties of the graphene-SiC interface will be modified by metal intercalation.

External Partners

Technische Universität Chemnitz


Sokolova, A., Kilchert, F., Link, S., Stoehr, A., Starke, U., & Schneider, M.A. (2017). Sub-Monolayer Growth of Titanium, Cobalt, and Palladium on Epitaxial Graphene. Annalen Der Physik, 529(11). https://dx.doi.org/10.1002/andp.201700031

Last updated on 2018-22-11 at 19:21