3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices

Third Party Funds Group - Sub project

Overall project details

Overall project: CHALLENGE


Project Details

Project leader:
Prof. Dr.-Ing. Peter Wellmann


Contributing FAU Organisations:
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Funding source: Leadership in Enabling & Industrial Technologies (LEIT)
Acronym: CHALLENGE
Start date: 01/01/2017
End date: 31/12/2020


Abstract (technical / expert description):


Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remained for long period a real advantage in terms of scalability regarding the redu…


Last updated on 2018-22-11 at 18:40