3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices (CHALLENGE)
Third Party Funds Group - Sub project
Acronym:
CHALLENGE
Start date :
01.01.2017
End date :
31.12.2020
Overall project details
Overall project
CHALLENGE
Project details
Scientific Abstract
Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remained for long period a real advantage in terms of scalability regarding the redu…
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