Atomic layer deposition of dopant source layers for semiconductor doping - Characterization and modelling of drive-in processes

Third party funded individual grant

Project Details

Project leader:

Project members:
PD Dr. Peter Pichler

Contributing FAU Organisations:
Lehrstuhl für Elektronische Bauelemente
Technische Fakultät

Funding source: DFG-Einzelförderung / Sachbeihilfe (EIN-SBH)
Acronym: FR 713/14-1
Start date: 02/10/2017
End date: 30/09/2019

Research Fields

Silicon Semiconductor Technology
Lehrstuhl für Elektronische Bauelemente

Abstract (technical / expert description):

Atomic layer deposition processes for phosphorus-containing layers will be developed and investigated. Recently developed ALD processes for boron oxide and antimony oxide will be further improved and analyzed as well. These layers will be used as a dopant sources for silicon doping to produce ultra-shallow and homogeneous doped pn junctions, especially for applications, where doping on three-dimensional surface configurations is required.

In addition, suitable methods for stabilization of unstable dopant layers need to be found and analyzed. The deposited layers will be characterized and the diffusion processes in the silicon and in the oxide phase will be studied, and thus the doping processes will be modeled.

External Partners

Otto-von-Guericke-Universität Magdeburg


Beljakowa, S., Pichler, P., Kalkofen, B., & Hübner, R. (2019). Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon. physica status solidi (a), 216(17).
Kalkofen, B., Ahmed, B., Beljakowa, S., Lisker, M., Kim, Y.S., & Burte, E.P. (2018). Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures. In 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO). Cork, IE: NEW YORK: IEEE.

Last updated on 2019-18-09 at 12:09