Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates

Drittmittelfinanzierte Gruppenförderung - Teilprojekt

Details zum übergeordneten Gesamtprojekt

Titel des Gesamtprojektes: Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates


Details zum Projekt

Projektleiter/in:


Beteiligte FAU-Organisationseinheiten:
Lehrstuhl für Angewandte Physik

Mittelgeber: EU - 6. RP / Structuring the ERA / Marie Curie Research Training Networks (RTN)
Akronym: MANSiC
Projektstart: 01.01.2007
Projektende: 31.12.2010


Forschungsbereiche

Halbleitermaterialien: Dotierstoffe und Defekte (Dr. Krieger, Prof. Weber)
Lehrstuhl für Angewandte Physik


Abstract (fachliche Beschreibung):


The aim of MANSiC project is to promote and structure a multidisciplinary training network for young researchers based on the challenging and promising development of 3C-SiC technology. Indeed, this cubic polytype of SiC was for long set apart due to the lack of adequate substrate so that the heteroepitaxial layers were far from device quality. Despite the recent availability of commercial 3C-SiC crystals, originally grown on Si, the defect density is still too high so that the blocking performances are far below the industrial needs. Using hexagonal SiC substrate, the cubic layers usually contain device killer defects. Recently, new growth techniques are being developed in Europe with very promising results since these defects can be completely eliminated. The re is no real competitor on the international level using similar techniques which means that Europe is in advance on this specific subject and has a major role to play. A joint effort on the growth of 3C-SiC on hexagonal substrate in the framework of MANS iC project would surely allow developing an alternative and European commercial source of this polytype with better crystalline quality than the actual commercial product. Such improved material would be first characterized and tested (from surface polishing to device fabrication) by the proposed MANSiC consortium with the aim of fabricating power devices such as VDMOSFET or MESFET. Such a complex and interrelated research project is an excellent base to assemble a training project for young researchers in the field of solid state physics and materials science. PhD students and young researchers will be trained in the various fields: from new growth techniques, to wide band-gap material characterization and fabrication of power devices. Workshops and summer schools will be organized to provide the young researchers with the essential scientific knowledge background and to give them the opportunity to present their work and results to the scientific community.



Externe Partner

Université Claude Bernard Lyon 1 (UCB)
Consiglio Nazionale delle Ricerche (CNR)
NOVASiC
Acreo AB
Lyon Ingénierie Projets
Ezus Lyon SA
Spanish National Research Council / Consejo Superior de Investigaciones Científicas (CSIC)
Vilnius University / Vilniaus universitetas
National Center for Scientific Research / Centre national de la recherche scientifique (CNRS)
Linköping University
Institut National Polytechnique de Grenoble - Grenoble Institute of Technology
Aristotle University of Thessaloniki

Zuletzt aktualisiert 2017-27-03 um 12:29