Michael Schöler

Institute Materials for Electronics and Energy Technology (i-MEET) Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Multiscale Simulations for Defect-Controlled Processing of Group IV Materials (2022) Calogero G, Deretzis I, Fisicaro G, Kollmuß M, La Via F, Lombardo SF, Schöler M, et al. Journal article Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding (2022) Kollmuß M, Schöler M, Anzalone R, Mauceri M, La Via F, Wellmann P Conference contribution New approaches and understandings in the growth of cubic silicon carbide (2021) Via FL, Zimbone M, Bongiorno C, La Magna A, Fisicaro G, Deretzis I, Scuderi V, et al. Journal article Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates (2021) Schöler M, La Via F, Mauceri M, Wellmann P Journal article Prospects of bulk growth of 3C-SiC using sublimation growth (2020) Wellmann P, Schuh P, Kollmuß M, Schöler M, Steiner J, Zielinski M, Mauceri M, La Via F Journal article Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters (2020) Schöler M, Lederer M, Schuh P, Wellmann P Journal article Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbide (2019) Schöler M, Brecht C, Wellmann P Journal article Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base (2019) Schöler M, Schuh P, Steiner J, Wellmann P Journal article, Original article Deep electronic levels in n-type and p-type 3C-SiC (2019) Schöler M, Lederer M, Wellmann P Journal article, Original article Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide (2019) Schöler M, Lederer M, Schuh P, Wellmann P Other publication type