Radu Ciocoveanu



Organisationseinheit


Lehrstuhl für Technische Elektronik


Preise / Auszeichnungen


2019 : RWW Student Paper Competition, 2nd place


Publikationen (Download BibTeX)


Ciocoveanu, R., Weigel, R., Hagelauer, A., & Issakov, V. (2019). A 60 GHz 30.5% PAE Differential Stacked PA with Second Harmonic Control in 45 nm PD-SOI CMOS. (Unpublished, Accepted).
Ciocoveanu, R., Weigel, R., Hagelauer, A., Geiselbrechtinger, A., & Issakov, V. (2018). 5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS. In 5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS. Kyoto International Conference Center, Kyoto, Japan, JP.
Ciocoveanu, R., Rimmelspacher, J., Weigel, R., Hagelauer, A., & Issakov, V. (2018). A 1.8-mW Low Power, PVT-Resilient, High Linearity, modified Gilbert-Cell Down-Conversion Mixer in 28-nm CMOS. (pp. 19-22). Anaheim, USA.
Ciocoveanu, R., Weigel, R., Hagelauer, A., & Issakov, V. (2018). A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS. In A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS. San Diego, California, USA, US.
Ciocoveanu, R., Weigel, R., Hagelauer, A., & Issakov, V. (2018). Bias-switched Down-Conversion Mixer for Flicker Noise Reduction in 28-nm CMOS. In Texas Symposium on Wireless and Microwave Circuits and Systems. Waco, Texas, US: IEEE.

Zuletzt aktualisiert 2018-08-04 um 06:55