Prof. Dr. Heiko B. Weber

Thomson Researcher ID: D-2654-2012
Scopus Author ID: 7403096923


Lehrstuhl für Angewandte Physik

Awards / Honours

2004 : Erwin-Schrödinger-Preis


Realisierung eines monolithischen integrierten elektronischen Schaltkreises auf der Basis epitaktischen Graphens auf Siliziumkarbid

Project lead

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Single Color Centers in Silicon Carbide: electro-optical access via epitaxial graphene
Prof. Dr. Heiko B. Weber

Monolithic electronic circuits based on epitaxial graphene
Prof. Dr. Heiko B. Weber

(SPP 1459: Graphen):
Interaction effects and gateless patterning in epitaxial graphene on silicon carbide (0001)
Prof. Dr. Heiko B. Weber

(SFB 953: Synthetic Carbon Allotropes):
SFB 953: Graphene and Organic Molecules: Transport Experiments (B08)
Prof. Dr. Heiko B. Weber

Graphene on SiC: Fabrication, electronic structure and transistor applications
Prof. Dr. Heiko B. Weber
(01/07/2007 - 30/06/2010)

Publications (Download BibTeX)

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Hauck, M., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2019). An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. Communications Physics, 2, 5.
Schlecht, M.-T., Malzer, S., Preu, S., & Weber, H.B. (2019). An efficient Terahertz rectifier on the graphene/SiC materials platform. Scientific Reports, 9.
Popp, M.A., & Weber, H.B. (2019). An ultra-stable setup for measuring electrical and thermoelectrical properties of nanojunctions. Applied Physics Letters, 115(8).
Heidorn, C., Esteve, R., Höchbauer, T., Krieger, M., Weber, H.B., & Rupp, R. (2019). Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 114-118). Birmingham, GB: Trans Tech Publications Ltd.
Kißlinger, F., Rienmüller, D., Ott, C., Kampert, E., & Weber, H.B. (2019). Fractional Quantum Conductance Plateaus in Mosaic-Like Conductors and Their Similarities to the Fractional Quantum Hall Effect. Annalen Der Physik, 531.
Heide, C., Boolakee, T., Higuchi, T., Weber, H.B., & Hommelhoff, P. (2019). Interaction of carrier envelope phase-stable laser pulses with graphene:the transition from the weak-field to the strong-field regime. New Journal of Physics.
Heide, C., Higuchi, T., Ullmann, K., Weber, H.B., & Hommelhoff, P. (2019). Lightwave-controlled electron dynamics in graphene. In EPJ Web Conf. (Eds.), 205 (pp. 05002).
Heide, C., Higuchi, T., Weber, H.B., & Hommelhoff, P. (2018). Coherent Electron Trajectory Control in Graphene. Physical Review Letters, 121.
Rühl, M., Ott, C., Götzinger, S., Krieger, M., & Weber, H.B. (2018). Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing. Applied Physics Letters, 113, 122102.
Rasinger, F., Pobegen, G., Aichinger, T., Weber, H.B., & Krieger, M. (2018). Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs. Materials Science Forum, 924, 277-280.

Last updated on 2019-22-01 at 17:50