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Christian Strenger
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Lehrstuhl für Elektronische Bauelemente
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Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs (2013)
Strenger C, Uhnevionak V, Burenkov A, Bauer A, Pichler P, Erlbacher T, Ryssel H, Frey L
Conference contribution, Conference Contribution