Dr. Svetlana Beljakowa



Organisationseinheit


Lehrstuhl für Angewandte Physik


Publikationen (Download BibTeX)


Śledziewski, T., Vivona, M., Alassaad, K., Kwasnicki, P., Arvinte, R., Beljakowa, S.,... Krieger, M. (2016). Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition. Journal of Applied Physics, 120(20). https://dx.doi.org/10.1063/1.4967301
Śledziewski, T., Beljakowa, S., Alassaad, K., Kwasnicki, P., Arvinte, R., Juillaguet, S.,... Krieger, M. (2014). Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition. Materials Science Forum, 778-780, 261-264. https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.261
Beljakowa, S., Hauck, M., Bockstedte, M.G., Fromm, F., Hundhausen, M., Nagasawa, H.,... Krieger, M. (2014). Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures. Materials Science Forum, 778-780, 265-268. https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.265
Krieger, M., Beljakowa, S., Trapaidze, L., Frank, T., Weber, H.B., Pensl, G.,... Schöner, A. (2008). Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors. physica status solidi (b), 245(7), 1390-1395. https://dx.doi.org/10.1002/pssb.200844062

Zuletzt aktualisiert 2016-05-05 um 05:20