Prof. Dr. Albrecht Winnacker



Organisation


Technische Fakultät


Awards / Honours


2012 : Mitgliedschaft Heidelberger Akademie der Wissenschaften
2004 : Mitgliedschaft acatech - Deutsche Akademie der Technikwissenschaften


Publications (Download BibTeX)

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Wellmann, P., Bickermann, M., Hofmann, H.-D., Kadinski, L., Selder, M., Straubinger, T., & Winnacker, A. (2000). In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging. Journal of Crystal Growth, 216(1-4), 263-272. https://dx.doi.org/10.1016/S0022-0248(00)00372-9
Winnacker, A., Hofmann, H.-D., & Wellmann, P. (2000). Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics. In Proceedings of the third Vietnam-German Workshop on Physics and Engineering. Ho Chi Minh City, VN.
Hofmann, H.-D., Schmitt, E., Bickermann, M., Kölbl, M., Wellmann, P., & Winnacker, A. (1999). Analysis on defect generation during the SiC bulk growth process. Materials Science and Engineering B-Advanced Functional Solid-State Materials, B61-62, 48-53. https://dx.doi.org/10.1016/S0921-5107(98)00443-7
Wellmann, P., Bickermann, M., Grau, M., Hofmann, H.-D., Straubinger, T., & Winnacker, A. (1999). Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging. Materials Research Society Symposium - Proceedings, 572, 259-264. https://dx.doi.org/10.1557/PROC-572-259
Wellmann, P., Winnacker, A., & Pensl, G. (1996). On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP. Materials Research Society Symposium - Proceedings, 422, 255-266. https://dx.doi.org/10.1557/PROC-422-255
Burchard, A., Deicher, M., Forkel-Wirth, D., Freidinger, J., Kerle, T., Magerle, R.,... Winnacker, A. (1995). Acceptor-hydrogen interaction in ternary III-V semiconductors. Materials Science Forum, 196-201, 987-991. https://dx.doi.org/10.4028/www.scientific.net/MSF.196-201.987
Waldmüller, S., Lang, M., Wellmann, P., & Winnacker, A. (1994). Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy. In IEEE (Eds.), Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) (pp. 231-234). Santa Barbara, CA, US.

Last updated on 2016-11-05 at 05:25