PD Dr. Thomas Seyller



Organisationseinheit


Lehrstuhl für Laserphysik
Naturwissenschaftliche Fakultät


Publikationen (Download BibTeX)

Go to first page Go to previous page 1 von 4 Go to next page Go to last page

Wehrfritz, P., Fromm, F., Malzer, S., & Seyller, T. (2014). Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate. Journal of Physics D-Applied Physics, 47, 305103 (5pp). https://dx.doi.org/10.1088/0022-3727/47/30/305103
Schäfer, R., Englert, J., Wehrfritz, P., Bauer, W., Hauke, F., Seyller, T., & Hirsch, A. (2013). Auf dem Weg zu Graphan – ausgeprägte Fluoreszenz von polyhydriertem Graphen. Angewandte Chemie, 125(2), 782-786. https://dx.doi.org/10.1002/ange.201206799
Gebhardt, J., Koch, R., Zhao, W., Höfert, O., Gotterbarm, K., Mammadov, S.,... Seyller, T. (2013). Growth and electronic structure of boron-doped graphene. Physical Review B, 87(15). https://dx.doi.org/10.1103/PhysRevB.87.155437
Schäfer, R., Englert, J., Wehrfritz, P., Bauer, W., Hauke, F., Seyller, T., & Hirsch, A. (2013). On the way to graphane - Pronounced fluorescence of polyhydrogenated graphene. Angewandte Chemie-International Edition, 52(2), 754-757. https://dx.doi.org/10.1002/anie.201206799
Waldmann, D., Butz, B., Bauer, S., Englert, J., Jobst, J., Ullmann, K.,... Spiecker, E. (2013). Robust graphene membranes in a silicon carbide frame. ACS nano, 7(5), 4441-4448. https://dx.doi.org/10.1021/nn401037c
Wehrfritz, P., Fromm, F., Malzer, S., & Seyller, T. (2013). Silicon nitride as top gate dielectric for epitaxial graphene. In Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (Eds.), Silicon Carbide and Related Materials 2012. (pp. 149-152). Trans Tech Publications.
Ostler, M., Koch, R., Speck, F., Fromm, F., Vita, H., Hundhausen, M.,... Seyller, T. (2012). Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation. Materials Science Forum, 717-720, 649. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.649
Waldmann, D., Jobst, J., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2012). Gated Epitaxial Graphene Devices. Materials Science Forum, 717-720, 675-678. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.675
Koch, R., Weser, M., Zhao, W., Vines, F., Gotterbarm, K., Kozlov, S.M.,... Seyller, T. (2012). Growth and electronic structure of nitrogen-doped graphene on Ni(111). Physical Review B, 86(7). https://dx.doi.org/10.1103/PhysRevB.86.075401
Waldmann, D., Jobst, J., Fromm, F., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2012). Implanted bottom gate for epitaxial graphene on silicon carbide. Journal of Physics D-Applied Physics, 45, 154006. https://dx.doi.org/10.1088/0022-3727/45/15/154006

Zuletzt aktualisiert 2016-05-05 um 05:28