PD Dr. Thomas Seyller

Naturwissenschaftliche Fakultät Lehrstuhl für Laserphysik

Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate (2014) Wehrfritz P, Fromm F, Malzer S, Seyller T Journal article Robust graphene membranes in a silicon carbide frame (2013) Waldmann D, Butz B, Bauer S, Englert J, Jobst J, Ullmann K, Fromm F, et al. Journal article Growth and electronic structure of boron-doped graphene (2013) Gebhardt J, Koch R, Zhao W, Höfert O, Gotterbarm K, Mammadov S, Papp C, et al. Journal article Silicon nitride as top gate dielectric for epitaxial graphene (2013) Wehrfritz P, Fromm F, Malzer S, Seyller T Book chapter / Article in edited volumes On the way to graphane - Pronounced fluorescence of polyhydrogenated graphene (2013) Schäfer R, Englert J, Wehrfritz P, Bauer W, Hauke F, Seyller T, Hirsch A Journal article, Original article Growth and electronic structure of nitrogen-doped graphene on Ni(111) (2012) Koch R, Weser M, Zhao W, Vines F, Gotterbarm K, Kozlov SM, Höfert O, et al. Journal article Origin of Doping in Quasi-Free-Standing Graphene on Silicon Carbide (2012) Ristein J, Mammadov S, Seyller T Journal article Gated Epitaxial Graphene Devices (2012) Waldmann D, Jobst J, Speck F, Seyller T, Krieger M, Weber HB Journal article Implanted bottom gate for epitaxial graphene on silicon carbide (2012) Waldmann D, Jobst J, Fromm F, Speck F, Seyller T, Krieger M, Weber HB Journal article Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation (2012) Ostler M, Koch R, Speck F, Fromm F, Vita H, Hundhausen M, Horn K, Seyller T Journal article