Alexander Gröschel



Organisation


Lehrstuhl für Kristallographie und Strukturphysik


Publications (Download BibTeX)


Bergmann, C., Gröschel, A., Will, J., & Magerl, A. (2015). Strain relief via silicon self-interstitial emission in highly boron-doped silicon: A diffuse X-ray scattering study of oxygen precipitation. Journal of Applied Physics, 118(1). https://dx.doi.org/10.1063/1.4926429
Will, J., Gröschel, A., Bergmann, C., Spiecker, E., & Magerl, A. (2014). Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction. Journal of Applied Physics, 115(12). https://dx.doi.org/10.1063/1.4868586
Will, J., Gröschel, A., Bergmann, C., Weißer, M., & Magerl, A. (2014). Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction. Applied Physics Letters, 105(11). https://dx.doi.org/10.1063/1.4896184
Gröschel, A., Will, J., Bergmann, C., & Magerl, A. (2014). Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction. Journal of Applied Physics, 115(23). https://dx.doi.org/10.1063/1.4883998
Bergmann, C., Will, J., Gröschel, A., Weißer, M., & Magerl, A. (2014). Radial oxygen precipitation of a 12 '' CZ silicon crystal studied in-situ with high energy X-ray diffraction. physica status solidi (a), 211(11), 2450-2454. https://dx.doi.org/10.1002/pssa.201400062
Will, J., Gröschel, A., Kot, D., Bergmann, C., Steinrück, H.-G., Schubert, M.A.,... Magerl, A. (2013). Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. Journal of Applied Physics, 113(7). https://dx.doi.org/10.1063/1.4792747
Will, J., Gröschel, A., Bergmann, C., & Magerl, A. (2012). In-situ measurement of thickness-dependent Pendellosung oscillations from a precipitation process in silicon at 650 degrees C. (pp. 1920-1923).
Will, J., Gröschel, A., Bergmann, C., & Magerl, A. (2011). In-Situ observation of the oxygen nucleation in silicon with X-Ray single crystal diffraction. (pp. 353-359).
Gröschel, A., Will, J., Bergmann, C., Grillenberger, H., Eichler, S., Scheffer-Czygan, M., & Magerl, A. (2011). Structural Defect Studies of Semiconductor Crystals with Laue Topography. (pp. 360-+).
Will, J., Gröschel, A., Weißer, M., & Magerl, A. (2011). Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals. Applied Physics Letters, 98(4). https://dx.doi.org/10.1063/1.3531761

Last updated on 2016-30-11 at 01:02