Martin Hauck



Organisationseinheit


Lehrstuhl für Angewandte Physik
Sonderforschungsbereich 953/2 Synthetische Kohlenstoffallotrope


Publikationen (Download BibTeX)


Hauck, M., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2019). An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. Communications Physics, 2, 5. https://dx.doi.org/10.1038/s42005-018-0102-8
Hauck, M., & Krieger, M. (2019). Präziser Einblick ins Innerste von Siliziumkarbid-MOSFETs. Elektronikpraxis - Profiline, Sonderheft Leistungselektronik und Stromversorgungen I, 16-18.
Weiße, J., Hauck, M., Sledziewski, T., Tschiesche, M., Krieger, M., Bauer, A.,... Erlbacher, T. (2018). Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices. Materials Science Forum, 924, 184-187. https://dx.doi.org/10.4028/www.scientific.net/MSF.924.184
Niesner, D., Hauck, M., Shrestha, S., Levchuk, I., Matt, G., Osvet, A.,... Fauster, T. (2018). Structural fluctuations cause spin-split states in tetragonal (CH3NH3)PbI3 as evidenced by the circular photogalvanic effect. Proceedings of the National Academy of Sciences, 115(38), 9509-9514. https://dx.doi.org/10.1073/pnas.1805422115
Niesner, D., Hauck, M., Shrestha, S., Levchuk, I., Matt, G.J., Osvet, A.,... Fauster, T. (2017). Spin-split bands cause the indirect band gap of (CH3NH3)PbI3: Experimental evidence from circular photogalvanic effect. Proceedings of the National Academy of Sciences. https://dx.doi.org/10.1073/pnas.1805422115
Pobegen, G., Weiße, J., Hauck, M., Weber, H.B., & Krieger, M. (2016). On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs. Materials Science Forum, 858(473). https://dx.doi.org/10.4028/www.scientific.net/MSF.858.473
Hauck, M., Weiße, J., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2016). Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy. In Materials Science Forum..
Beljakowa, S., Hauck, M., Bockstedte, M.G., Fromm, F., Hundhausen, M., Nagasawa, H.,... Krieger, M. (2014). Persistent Conductivity in n-type 3C-SiC Observed at Low Temperatures. Materials Science Forum, 778-780, 265-268. https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.265

Zuletzt aktualisiert 2016-10-07 um 05:27