PD Dr. Matthias Bickermann

Technische Fakultät

Ohmic and rectifying contacts on bulk AlN for radiation detector applications (2012) Erlbacher T, Bickermann M, Kallinger B, Meissner E, Bauer A, Frey L Journal article, Original article Structural defects in aluminium nitride bulk crystals visualized by cathodoluminescence maps (2011) Bickermann M, Schimmel S, Epelbaum B, Filip O, Heimann P, Nagata S, Winnacker A Journal article, Original article Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals (2003) Bickermann M, Weingärtner R, Herro ZG, Hofmann HD, Künecke U, Wellmann P, Winnacker A Journal article, Original article Impact of compensation on optical absorption bands in the below-bandgap region in n-type (N) 6H-SiC (2003) Weingärtner R, Bickermann M, Herro ZG, Künecke U, Sakwe A, Wellmann P, Winnacker A Journal article, Original article Optical quantitative determination of doping levels and their distribution in SiC (2002) Wellmann P, Weingärtner R, Bickermann M, Straubinger T, Winnacker A Journal article Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method (2002) Straubinger T, Bickermann M, Weingärtner R, Wellmann P, Winnacker A Journal article Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method (2002) Straubinger T, Bickermann M, Rasp M, Weingärtner R, Wellmann P, Winnacker A Journal article, Original article Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements (2002) Weingärtner R, Wellmann P, Bickermann M, Hofmann HD, Straubinger T, Winnacker A Journal article On the preparation of semi-insulating SiC bulk crystals by the PVT technique (2001) Bickermann M, Hofmann HD, Straubinger T, Weingärtner R, Wellmann P, Winnacker A Journal article Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC (2001) Weingärtner R, Bickermann M, Bushevoy S, Hofmann HD, Rasp M, Straubinger T, Wellmann P, Winnacker A Journal article