Dr. Michael Krieger

Thomson Researcher ID: H-9354-2012
Scopus Autoren ID: 7102773075



Organisationseinheit


Lehrstuhl für Angewandte Physik


Preise / Auszeichnungen


2016 : SEMIKRON Innovation Award 2016
2014 : Preis für besonderes Engagement in der Lehre
2006 : Ohm-Preis
2001 : Ohm-Preis


Erfindung/en


Halbleiterbauelement
Realisierung eines monolithischen integrierten elektronischen Schaltkreises auf der Basis epitaktischen Graphens auf Siliziumkarbid



Projektleitung


(Training NETwork on Functional Interfaces for SiC):
NetFISiC: Training NETwork on Functional Interfaces for SiC
Dr. Michael Krieger
(01.01.2009 - 31.12.2011)


Mitarbeit in Forschungsprojekten


Einzelne Farbzentren in Siliziumkarbid: elektrooptischer Zugang mittels epitaktischem Graphen
Prof. Dr. Heiko B. Weber
(01.04.2017)


Publikationen (Download BibTeX)

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Hauck, M., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2019). An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. Communications Physics, 2, 5. https://dx.doi.org/10.1038/s42005-018-0102-8
Weiße, J., Hauck, M., Sledziewski, T., Tschiesche, M., Krieger, M., Bauer, A.,... Erlbacher, T. (2018). Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices. In Materials Science Forum.
Rühl, M., Ott, C., Götzinger, S., Krieger, M., & Weber, H.B. (2018). Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing. Applied Physics Letters, 113, 122102. https://dx.doi.org/10.1063/1.5045859
Rasinger, F., Pobegen, G., Aichinger, T., Weber, H.B., & Krieger, M. (2018). Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs. Materials Science Forum, 924, 277-280. https://dx.doi.org/10.4028/MSF.924.277
Krieger, M., Rühl, M., Sledziewski, T., Ellrott, G., Palm, T., Weber, H.B., & Bockstedte, M.G. (2016). Doping of 4H-SiC with group IV elements. Materials Science Forum, 858, 301. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.301
Sledziewski, T., Vivona, M., Alassaad, K., Kwasnicki, P., Arvinte, R., Beljakowa, S.,... Krieger, M. (2016). Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition. Journal of Applied Physics, 120(20). https://dx.doi.org/10.1063/1.4967301
Pobegen, G., Weiße, J., Hauck, M., Weber, H.B., & Krieger, M. (2016). On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs. Materials Science Forum, 858(473). https://dx.doi.org/10.4028/www.scientific.net/MSF.858.473
Sledziewski, T., Weber, H.B., & Krieger, M. (2016). Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces. Materials Science Forum, 858, 697-700. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.697
Hauck, M., Weiße, J., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2016). Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy. In Materials Science Forum.
Sorger, C., Hertel, S., Jobst, J., Steiner, C., Meil, K., Ullmann, K.,... Weber, H.B. (2015). Gateless patterning of epitaxial graphene by local intercalation. Nanotechnology, 26, 025302. https://dx.doi.org/10.1088/0957-4484/26/2/025302

Zuletzt aktualisiert 2017-02-05 um 17:09