Dr. Michael Krieger

Thomson Researcher ID: H-9354-2012
Scopus Autoren ID: 7102773075



Organisationseinheit


Lehrstuhl für Angewandte Physik


Preise / Auszeichnungen


2016 : SEMIKRON Innovation Award 2016
2014 : Preis für besonderes Engagement in der Lehre
2006 : Ohm-Preis
2001 : Ohm-Preis


Erfindung/en


Halbleiterbauelement
Realisierung eines monolithischen integrierten elektronischen Schaltkreises auf der Basis epitaktischen Graphens auf Siliziumkarbid



Projektleitung


(Training NETwork on Functional Interfaces for SiC):
NetFISiC: Training NETwork on Functional Interfaces for SiC
Dr. Michael Krieger
(01.01.2009 - 31.12.2011)


Mitarbeit in Forschungsprojekten


Einzelne Farbzentren in Siliziumkarbid: elektrooptischer Zugang mittels epitaktischem Graphen
Prof. Dr. Heiko B. Weber
(01.04.2017)


Publikationen (Download BibTeX)

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Weiße, J., Hauck, M., Krieger, M., Bauer, A., & Erlbacher, T. (2019). Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC. AIP Advances, 9(5), 055308. https://dx.doi.org/10.1063/1.5096440
Hauck, M., Lehmeyer, J., Pobegen, G., Weber, H.B., & Krieger, M. (2019). An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors. Communications Physics, 2, 5. https://dx.doi.org/10.1038/s42005-018-0102-8
Heidorn, C., Esteve, R., Höchbauer, T., Krieger, M., Weber, H.B., & Rupp, R. (2019). Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 114-118). Birmingham, GB: Trans Tech Publications Ltd.
Berens, J., Rasinger, F., Aichinger, T., Heuken, M., Krieger, M., & Pobegen, G. (2019). Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET. IEEE Transactions on Electron Devices, 66(3), 1213-1217. https://dx.doi.org/10.1109/TED.2019.2891820
Weiße, J., Hauck, M., Sledziewski, T., Krieger, M., Bauer, A., Mitlehner, H.,... Erlbacher, T. (2019). On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 433-436). Birmingham, GB: Trans Tech Publications Ltd.
Hauck, M., & Krieger, M. (2019). Präziser Einblick ins Innerste von Siliziumkarbid-MOSFETs. Elektronikpraxis - Profiline, Sonderheft Leistungselektronik und Stromversorgungen I, 16-18.
Weiße, J., Hauck, M., Krieger, M., Bauer, A.J., & Erlbacher, T. (2019). Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440). AIP Advances, 9(7). https://dx.doi.org/10.1063/1.5118666
Weiße, J., Hauck, M., Sledziewski, T., Tschiesche, M., Krieger, M., Bauer, A.,... Erlbacher, T. (2018). Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices. Materials Science Forum, 924, 184-187. https://dx.doi.org/10.4028/www.scientific.net/MSF.924.184
Rühl, M., Ott, C., Götzinger, S., Krieger, M., & Weber, H.B. (2018). Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing. Applied Physics Letters, 113, 122102. https://dx.doi.org/10.1063/1.5045859
Rasinger, F., Pobegen, G., Aichinger, T., Weber, H.B., & Krieger, M. (2018). Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs. Materials Science Forum, 924, 277-280. https://dx.doi.org/10.4028/MSF.924.277

Zuletzt aktualisiert 2019-22-01 um 17:49