Felix Oehlschläger


Institute Materials for Electronics and Energy Technology (i-MEET)

Publications (Download BibTeX)

Oehlschläger, F., Müller, J., Künecke, U., Hoelzing, A., Schurr, R., Hock, R., & Wellmann, P. (2010). Determination of material inhomogeneities in CuIn(Se,S)(2) solar cell materials by high resolution cathodoluminescence topography. Energy Procedia, 2(1), 183-188. https://dx.doi.org/10.1016/j.egypro.2010.07.026
Tang, K., Künecke, U., Oehlschläger, F., Hölzing, A., Schurr, R., Hock, R., & Wellmann, P. (2010). Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials. Solar Energy Materials and Solar Cells, 94(11), 1875-1879. https://dx.doi.org/10.1016/j.solmat.2010.06.002
Hens, P., Syvaejaervi, M., Oehlschläger, F., Wellmann, P., & Yakimova, R. (2009). P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates. Materials Science Forum, 615-617, 85-88. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.85
Oehlschläger, F., Juillaguet, S., Peyre, H., Calmassel, J., & Wellmann, P. (2009). Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity. Materials Science Forum, 615-617, 259-262. https://dx.doi.org/10.4028/www.scientific.net/MSF.615-617.259
Wellmann, P., Sakwe, A., Oehlschläger, F., Hoffmann, V., Zeimer, U., & Knauer, A. (2008). Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching. Journal of Crystal Growth, 310(5), 955-958. https://dx.doi.org/10.1016/j.jcrysgro.2007.11.064

Last updated on 2016-15-08 at 02:01