Prof. Dr.-Ing. Peter Wellmann



Organisation


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)



Project lead

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Entwicklung eines Wachstumsprozesses für SiC-Wafer mit Durchmessern größer 10cm unter Anwendung der neuen SiC-Quellenmaterialien
Prof. Dr.-Ing. Peter Wellmann
(20/12/2018 - 31/05/2020)

Quantitative Charakterisierung und Vorhersage von Versetzungsverhalten in hochreinem SiC
Prof. Dr.-Ing. Peter Wellmann
(01/01/2018 - 31/12/2020)

MYCIGS: Energieertragsoptimierte Cu (In, Ga) (S,Se) 2-Dünnschichtsolarmodule durch gezielte Steuerung der Ertragsparameter Materialwissenschaftliche Charakterisierung
Prof. Dr.-Ing. Peter Wellmann
(01/10/2017 - 30/09/2020)

(CHALLENGE):
CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01/01/2017 - 31/12/2020)

Analysis of the growth kinetics during high temperature crystal growth of SiC using computed tomography for the in-situ 3D visualization of the growth interface
Prof. Dr.-Ing. Peter Wellmann
(01/05/2016 - 30/04/2019)


Publications (Download BibTeX)

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Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1997). Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs. Applied Physics Letters, 71(17), 2532-2534. https://dx.doi.org/10.1063/1.120109
Van Esch, A., Van Bockstal, L., De Boeck, J., Verbanck, G., Van Steenbergen, A., Wellmann, P.,... Borghs, G. (1997). Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs. Physical Review B, 56(20), 13103-13112.
Wellmann, P., Winnacker, A., & Pensl, G. (1996). On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP. Materials Research Society Symposium - Proceedings, 422, 255-266. https://dx.doi.org/10.1557/PROC-422-255
Burchard, A., Deicher, M., Forkel-Wirth, D., Freidinger, J., Kerle, T., Magerle, R.,... Winnacker, A. (1995). Acceptor-hydrogen interaction in ternary III-V semiconductors. Materials Science Forum, 196-201, 987-991. https://dx.doi.org/10.4028/www.scientific.net/MSF.196-201.987
Waldmüller, S., Lang, M., Wellmann, P., & Winnacker, A. (1994). Spatial distribution of charge carrier temperature and -lifetime in semi-insulating InP:Fe, observed via photoluminescence spectroscopy. In IEEE (Eds.), Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) (pp. 231-234). Santa Barbara, CA, US.

Last updated on 2016-05-05 at 05:35