Prof. Dr.-Ing. Peter Wellmann


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Project lead

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Entwicklung eines Wachstumsprozesses für SiC-Wafer mit Durchmessern größer 10cm unter Anwendung der neuen SiC-Quellenmaterialien
Prof. Dr.-Ing. Peter Wellmann
(20/12/2018 - 31/05/2020)

Quantitative Charakterisierung und Vorhersage von Versetzungsverhalten in hochreinem SiC
Prof. Dr.-Ing. Peter Wellmann
(01/01/2018 - 31/12/2020)

MYCIGS: Energieertragsoptimierte Cu (In, Ga) (S,Se) 2-Dünnschichtsolarmodule durch gezielte Steuerung der Ertragsparameter Materialwissenschaftliche Charakterisierung
Prof. Dr.-Ing. Peter Wellmann
(01/10/2017 - 30/09/2020)

CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01/01/2017 - 31/12/2020)

Analysis of the growth kinetics during high temperature crystal growth of SiC using computed tomography for the in-situ 3D visualization of the growth interface
Prof. Dr.-Ing. Peter Wellmann
(01/05/2016 - 30/04/2019)

Publications (Download BibTeX)

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Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z.,... Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12.
Steiner, J., Roder, M., Nguyen, B.D., Sandfeld, S., Danilewsky, A., & Wellmann, P. (2019). Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC. Materials, 12(13).
La Via, F., Severino, A., Anzalone, R., Bongiorno, C., Litrico, G., Mauceri, M.,... Wellmann, P. (2018). From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction. Materials Science in Semiconductor Processing, 78, 57-68.
Arzig, M., Salamon, M., Uhlmann, N., Johansen, B.A., & Wellmann, P. (2018). Growth conditions and in situ computed tomography analysis of facetted bulk growth of SiC boules. Materials Science Forum, 924, 245-248.
Schimmel, S., Duchstein, P., Steigerwald, T., Kimmel, A.-C., Schlücker, E., Zahn, D.,... Wellmann, P. (2018). In situ X-ray monitoring of transport and chemistry of Ga-containing intermediates under ammonothermal growth conditions of GaN. Journal of Crystal Growth, 498, 214-223.
Arzig, M., Hsiao, T., & Wellmann, P. (2018). Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules. Advanced Materials Proceedings, 3(9), 540-543.
Schuster, M., Sisterhenn, P., Graf, L., & Wellmann, P. (2018). Processing and Characterization of Vacuum-Free CuInSe2 Thin Films from Nanoparticle-Precursors using Novel Temperature Treatment Techniques. International Journal of Nanoparticle Research, 2(4).
Wellmann, P. (2018). Review of SiC crystal growth technology. Semiconductor Science and Technology, 33(10), 1-21.
Fahlbusch, L., & Wellmann, P. (2018). Solution Growth of Silicon Carbide Using the Vertical Bridgman Method. Crystal Research and Technology.
Abdelhaleem, S., Hassanien, A., Ahmad, R., Schuster, M., Ashour, A., Distaso, M.,... Wellmann, P. (2018). Tuning the Properties of CZTS Films by Controlling the Process Parameters in Cost-Effective Non-vacuum Technique. Journal of Electronic Materials.

Last updated on 2016-05-05 at 05:35