Florian Speck



Organisationseinheit


Lehrstuhl für Laserphysik
Sonderforschungsbereich 953/2 Synthetische Kohlenstoffallotrope
Naturwissenschaftliche Fakultät


Publikationen (Download BibTeX)

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Ostler, M., Koch, R., Speck, F., Fromm, F., Vita, H., Hundhausen, M.,... Seyller, T. (2012). Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation. Materials Science Forum, 717-720, 649. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.649
Waldmann, D., Jobst, J., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2012). Gated Epitaxial Graphene Devices. Materials Science Forum, 717-720, 675-678. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.675
Waldmann, D., Jobst, J., Fromm, F., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2012). Implanted bottom gate for epitaxial graphene on silicon carbide. Journal of Physics D-Applied Physics, 45, 154006. https://dx.doi.org/10.1088/0022-3727/45/15/154006
Waldmann, D., Jobst, J., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2011). Bottom-gated epitaxial graphene. Nature Materials, 10, 357-360. https://dx.doi.org/10.1038/nmat2988
Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M.,... Seyller, T. (2011). The quasi-free-standing nature of graphene on H-saturated SiC(0001). Applied Physics Letters, 9, 12206. https://dx.doi.org/10.1063/1.3643034
Jobst, J., Waldmann, D., Speck, F., Hirner, R., Maude, D., Seyller, T., & Weber, H.B. (2011). Transport properties of high-quality epitaxial graphene on 6H-SiC(0001). Solid State Communications, 151(16), 1061-1064. https://dx.doi.org/10.1016/j.ssc.2011.05.015
Speck, F., Ostler, M., Röhrl, J., Emtsev, K., Hundhausen, M., Ley, L., & Seyller, T. (2010). Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM. Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 398. https://dx.doi.org/10.1002/pssc.200982496
Ristein, J., Zhang, W., Speck, F., Ostler, M., Ley, L., & Seyller, T. (2010). Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide. Journal of Physics D-Applied Physics, 43, 345303. https://dx.doi.org/10.1088/0022-3727/43/34/345303
Bostwick, A., Speck, F., Seyller, T., Horn, K., Polini, M., Asgari, R.,... Rotenberg, E. (2010). Observation of Plasmarons in Quasi-Freestanding Doped Graphene. Science, 328(5981), 999-1002. https://dx.doi.org/10.1126/science.1186489
Jobst, J., Waldmann, D., Speck, F., Hirner, R., Maude, D., Seyller, T., & Weber, H.B. (2010). Quantum oscillations and quantum Hall effect in epitaxial graphene. Physical Review B, 81(19). https://dx.doi.org/10.1103/PhysRevB.81.195434

Zuletzt aktualisiert 2016-05-05 um 05:21