Christoph Bergmann



Organisation


Lehrstuhl für Kristallographie und Strukturphysik


Publications (Download BibTeX)


Schiener, A., Schmidt, E., Bergmann, C., Seifert, S., Zahn, D., Krach, A.,... Magerl, A. (2017). The formation of CdS quantum dots and Au nanoparticles. Zeitschrift fur Kristallographie - Crystalline Materials, 232, 39-46. https://dx.doi.org/10.1515/zkri-2016-1978
Bergmann, C., Gröschel, A., Will, J., & Magerl, A. (2015). Strain relief via silicon self-interstitial emission in highly boron-doped silicon: A diffuse X-ray scattering study of oxygen precipitation. Journal of Applied Physics, 118(1). https://dx.doi.org/10.1063/1.4926429
Will, J., Gröschel, A., Bergmann, C., Spiecker, E., & Magerl, A. (2014). Diffusion-driven precipitate growth and ripening of oxygen precipitates in boron doped silicon by dynamical x-ray diffraction. Journal of Applied Physics, 115(12). https://dx.doi.org/10.1063/1.4868586
Will, J., Gröschel, A., Bergmann, C., Weißer, M., & Magerl, A. (2014). Growth and nucleation regimes in boron doped silicon by dynamical x-ray diffraction. Applied Physics Letters, 105(11). https://dx.doi.org/10.1063/1.4896184
Gröschel, A., Will, J., Bergmann, C., & Magerl, A. (2014). Misfit strain of oxygen precipitates in Czochralski silicon studied with energy-dispersive X-ray diffraction. Journal of Applied Physics, 115(23). https://dx.doi.org/10.1063/1.4883998
Bergmann, C., Will, J., Gröschel, A., Weißer, M., & Magerl, A. (2014). Radial oxygen precipitation of a 12 '' CZ silicon crystal studied in-situ with high energy X-ray diffraction. Physica Status Solidi A-Applications and Materials Science, 211(11), 2450-2454. https://dx.doi.org/10.1002/pssa.201400062
Will, J., Gröschel, A., Kot, D., Bergmann, C., Steinrück, H.-G., Schubert, M.A.,... Magerl, A. (2013). Oxygen diffusivity in silicon derived from dynamical X-ray diffraction. Journal of Applied Physics, 113(7). https://dx.doi.org/10.1063/1.4792747
Will, J., Gröschel, A., Bergmann, C., & Magerl, A. (2012). In-situ measurement of thickness-dependent Pendellosung oscillations from a precipitation process in silicon at 650 degrees C. (pp. 1920-1923).
Will, J., Gröschel, A., Bergmann, C., & Magerl, A. (2011). In-Situ observation of the oxygen nucleation in silicon with X-Ray single crystal diffraction. (pp. 353-359).
Gröschel, A., Will, J., Bergmann, C., Grillenberger, H., Eichler, S., Scheffer-Czygan, M., & Magerl, A. (2011). Structural Defect Studies of Semiconductor Crystals with Laue Topography. (pp. 360-+).

Last updated on 2016-30-11 at 01:02