Lars Fahlbusch


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Institute Materials for Electronics and Energy Technology (i-MEET)

Publications (Download BibTeX)

Fahlbusch, L., & Wellmann, P. (2018). Solution Growth of Silicon Carbide Using the Vertical Bridgman Method. Crystal Research and Technology.
Wellmann, P., Fahlbusch, L., Salamon, M., & Uhlmann, N. (2016). Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions. Materials Science Forum, 858, 49-52.
Fahlbusch, L., Schöler, M., Mattle, P., Schnitzer, S., Khodamoradi, H., Iwamoto, N.,... Wellmann, P. (2016). High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C. Materials Science Forum, 858, 33-36.
Salamon, M., Reisinger, S., Schlechter, T., Schmitt, M., Hofmann, T., Uhlmann, N.,... Wellmann, P. (2016). X-Ray Computed Tomography specifically adapted for monitoring of dynamic processes in material science and chemistry. In International Society for Industrial Process (Eds.), WCIPT8 - 8th WORLD CONGRESS ON INDUSTRIAL PROCESS TOMOGRAPHY. Iguassu Falls, BR: International Society for Industrial Process Tomography.
Wellmann, P., Neubauer, G., Fahlbusch, L., Salamon, M., & Uhlmann, N. (2015). Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping. Crystal Research and Technology, 50, 2-9.
Hens, P., Mueller, J., Fahlbusch, L., Spiecker, E., Wellmann, P., & Spiecker, E. (2011). Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy. Materials Science Forum, 679-680, 127-130.

Last updated on 2016-05-05 at 05:08