Tomasz Sledziewski



Organisationseinheit


Lehrstuhl für Angewandte Physik


Publikationen (Download BibTeX)


Krieger, M., Rühl, M., Śledziewski, T., Ellrott, G., Palm, T., Weber, H.B., & Bockstedte, M.G. (2016). Doping of 4H-SiC with group IV elements. Materials Science Forum, 858, 301. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.301
Śledziewski, T., Vivona, M., Alassaad, K., Kwasnicki, P., Arvinte, R., Beljakowa, S.,... Krieger, M. (2016). Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition. Journal of Applied Physics, 120(20). https://dx.doi.org/10.1063/1.4967301
Śledziewski, T., Weber, H.B., & Krieger, M. (2016). Passivation and generation of states at P-implanted thermally grown and deposited n-type 4H-SiC / SiO2 interfaces. Materials Science Forum, 858, 697-700. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.697
Śledziewski, T., Beljakowa, S., Alassaad, K., Kwasnicki, P., Arvinte, R., Juillaguet, S.,... Krieger, M. (2014). Characterization of Ge-doped homoepitaxial layers grown by chemical vapor deposition. Materials Science Forum, 778-780, 261-264. https://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.261

Zuletzt aktualisiert 2019-16-03 um 22:55