Philipp Schuh



Organisationseinheit


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Lehrstuhl für Werkstoffwissenschaften (Materialien der Elektronik und der Energietechnologie)


Publikationen (Download BibTeX)


Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z.,... Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12. https://dx.doi.org/10.1016/j.mssp.2018.10.028
La Via, F., Severino, A., Anzalone, R., Bongiorno, C., Litrico, G., Mauceri, M.,... Wellmann, P. (2018). From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction. Materials Science in Semiconductor Processing, 78, 57-68. https://dx.doi.org/10.1016/j.mssp.2017.12.012
Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers. Materials Science Forum, 897, 15-18. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.15
Schöler, M., Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers. Advanced Materials Proceedings, 2(12), 774-778. https://dx.doi.org/10.5185/amp.2017/419
Schuh, P., Arzig, M., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Growing bulk-like 3C-SiC from seeding material produced by CVD. Physica Status Solidi (A) Applications and Materials Science. https://dx.doi.org/10.1002/pssa.201600429
Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2017). Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers. Journal of Crystal Growth, 478, 159-162. https://dx.doi.org/10.1016/j.jcrysgro.2017.09.002
Schuh, P., Vecera, P., Hirsch, A., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2016). Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates. Materials Science Forum, 858, 89-92. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.89
Jokubavicius, V., Yazdi, G.R., Liljedahl, R., Ivanov, I.G., Sun, J., Liu, X.,... Syväjärvi, M. (2015). Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates. Crystal Growth & Design, 15, 2940-2947. https://dx.doi.org/10.1021/acs.cgd.5b00368

Zuletzt aktualisiert 2016-05-05 um 05:04