Philipp Schuh



Organisationseinheit


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Lehrstuhl für Werkstoffwissenschaften (Materialien der Elektronik und der Energietechnologie)


Publikationen (Download BibTeX)

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Lin, L., Ou, Y., Jokubavicius, V., Syväjärvi, M., Liang, M., Liu, Z.,... Ou, H. (2019). An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications. Materials Science in Semiconductor Processing, 91, 9-12. https://dx.doi.org/10.1016/j.mssp.2018.10.028
Schuh, P., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth. Materials, 12(13). https://dx.doi.org/10.3390/ma12132179
Tarekegne, A.T., Norrman, K., Jokubavicius, V., Syväjärvi, M., Schuh, P., Wellmann, P., & Ou, H. (2019). Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC. Applied Physics B-Lasers and Optics, 125(9). https://dx.doi.org/10.1007/s00340-019-7279-8
Schuh, P., Steiner, J., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks. Materials, 12, 1-8. https://dx.doi.org/10.3390/ma12152353
Schöler, M., Schuh, P., Steiner, J., & Wellmann, P. (2019). Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base. Materials Science Forum, 963, 157-160. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.157
Schuh, P., Künecke, U., Litrico, G., Mauceri, M., La Via, F., Monnoye, S.,... Wellmann, P. (2019). Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates. Materials Science Forum, 963, 149-152. https://dx.doi.org/10.4028/www.scientific.net/MSF.963.149
La Via, F., Severino, A., Anzalone, R., Bongiorno, C., Litrico, G., Mauceri, M.,... Wellmann, P. (2018). From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction. Materials Science in Semiconductor Processing, 78, 57-68. https://dx.doi.org/10.1016/j.mssp.2017.12.012
Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers. Materials Science Forum, 897, 15-18. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.15
Schöler, M., Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers. Advanced Materials Proceedings, 2(12), 774-778. https://dx.doi.org/10.5185/amp.2017/419
Schuh, P., Arzig, M., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Growing bulk-like 3C-SiC from seeding material produced by CVD. physica status solidi (a). https://dx.doi.org/10.1002/pssa.201600429

Zuletzt aktualisiert 2019-13-08 um 23:51