Philipp Schuh

Institute Materials for Electronics and Energy Technology (i-MEET) Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

New approaches and understandings in the growth of cubic silicon carbide (2021) Via FL, Zimbone M, Bongiorno C, La Magna A, Fisicaro G, Deretzis I, Scuderi V, et al. Journal article Prospects of bulk growth of 3C-SiC using sublimation growth (2020) Wellmann P, Schuh P, Kollmuß M, Schöler M, Steiner J, Zielinski M, Mauceri M, La Via F Journal article Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters (2020) Schöler M, Lederer M, Schuh P, Wellmann P Journal article Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC (2019) Tarekegne AT, Norrman K, Jokubavicius V, Syväjärvi M, Schuh P, Wellmann P, Ou H Journal article Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks (2019) Schuh P, Steiner J, La Via F, Mauceri M, Zielinski M, Wellmann P Journal article, Original article Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base (2019) Schöler M, Schuh P, Steiner J, Wellmann P Journal article, Original article Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates (2019) Schuh P, Künecke U, Litrico G, Mauceri M, La Via F, Monnoye S, Zielinski M, Wellmann P Journal article, Original article Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth (2019) Schuh P, La Via F, Mauceri M, Zielinski M, Wellmann P Journal article Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide (2019) Schöler M, Lederer M, Schuh P, Wellmann P Other publication type An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications (2019) Lin L, Ou Y, Jokubavicius V, Syväjärvi M, Liang M, Liu Z, Yi X, et al. Journal article, Original article