Johannes Jobst



Organisationseinheit


Lehrstuhl für Angewandte Physik


Erfindung/en


Halbleiterbauelement
Realisierung eines monolithischen integrierten elektronischen Schaltkreises auf der Basis epitaktischen Graphens auf Siliziumkarbid


Publikationen (Download BibTeX)

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Kißlinger, F., Popp, M.A., Jobst, J., Shallcross, S., & Weber, H.B. (2017). Charge-carrier transport in large-area epitaxial graphene. Annalen Der Physik, 2017. https://dx.doi.org/10.1002/andp.201700048
Sorger, C., Hertel, S., Jobst, J., Steiner, C., Meil, K., Ullmann, K.,... Weber, H.B. (2015). Gateless patterning of epitaxial graphene by local intercalation. Nanotechnology, 26, 025302. https://dx.doi.org/10.1088/0957-4484/26/2/025302
Jobst, J., Kißlinger, F., & Weber, H.B. (2013). Detection of the Kondo effect in the resistivity of graphene: Artifacts and strategies. Physical Review B, 88(15), 155412. https://dx.doi.org/10.1103/PhysRevB.88.155412
Shivaraman, S., Jobst, J., Waldmann, D., Weber, H.B., & Spencer, M. (2013). Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer. Physical Review B, 87(19). https://dx.doi.org/10.1103/PhysRevB.87.195425
Waldmann, D., Butz, B., Bauer, S., Englert, J., Jobst, J., Ullmann, K.,... Spiecker, E. (2013). Robust graphene membranes in a silicon carbide frame. ACS nano, 7(5), 4441-4448. https://dx.doi.org/10.1021/nn401037c
Krach, F., Hertel, S., Waldmann, D., Jobst, J., Krieger, M., Reshanov, S.,... Weber, H.B. (2012). A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel. Applied Physics Letters, 100, 122102. https://dx.doi.org/10.1063/1.3695157
Jobst, J., Waldmann, D., Gornyi, I., Mirlin, A., & Weber, H.B. (2012). Electron-Electron Interaction in the Magnetoresistance of Graphene. Physical Review Letters, 108(10). https://dx.doi.org/10.1103/PhysRevLett.108.106601
Waldmann, D., Jobst, J., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2012). Gated Epitaxial Graphene Devices. Materials Science Forum, 717-720, 675-678. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.675
Waldmann, D., Jobst, J., Fromm, F., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2012). Implanted bottom gate for epitaxial graphene on silicon carbide. Journal of Physics D-Applied Physics, 45, 154006. https://dx.doi.org/10.1088/0022-3727/45/15/154006
Jobst, J., & Weber, H.B. (2012). Origin of logarithmic resistance correction in graphene. Nature Physics, 8(5), 352-352. https://dx.doi.org/10.1038/nphys2297

Zuletzt aktualisiert 2016-05-05 um 05:03