Markus Ostler



Organisationseinheit


Graduiertenzentrum der FAU
Lehrstuhl für Laserphysik


Publikationen (Download BibTeX)


Ostler, M., Koch, R., Speck, F., Fromm, F., Vita, H., Hundhausen, M.,... Seyller, T. (2012). Decoupling the Graphene Buffer Layer SiC(0001) via Interface Oxidation. Materials Science Forum, 717-720, 649. https://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.649
Koch, R., Weser, M., Zhao, W., Vines, F., Gotterbarm, K., Kozlov, S.M.,... Seyller, T. (2012). Growth and electronic structure of nitrogen-doped graphene on Ni(111). Physical Review B, 86(7). https://dx.doi.org/10.1103/PhysRevB.86.075401
Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M.,... Seyller, T. (2011). The quasi-free-standing nature of graphene on H-saturated SiC(0001). Applied Physics Letters, 9, 12206. https://dx.doi.org/10.1063/1.3643034
Speck, F., Ostler, M., Röhrl, J., Emtsev, K., Hundhausen, M., Ley, L., & Seyller, T. (2010). Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM. Physica Status Solidi (C) Current Topics in Solid State Physics, 7, 398. https://dx.doi.org/10.1002/pssc.200982496
Ristein, J., Zhang, W., Speck, F., Ostler, M., Ley, L., & Seyller, T. (2010). Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide. Journal of Physics D-Applied Physics, 43, 345303. https://dx.doi.org/10.1088/0022-3727/43/34/345303
Crassee, I., Levallois, J., Walter, A.L., Ostler, M., Bostwick, A., Rotenberg, E.,... Kuzmenko, A.B. (2010). Giant Faraday rotation in single- and multilayer graphene. Nature Physics, 7(1), 48-51. https://dx.doi.org/10.1038/nphys1816
Speck, F., Ostler, M., Röhrl, J., Jobst, J., Waldmann, D., Hundhausen, M.,... Seyller, T. (2010). Quasi-freestanding Graphene on SiC(0001). Materials Science Forum, 645-648, 629-632. https://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.629

Zuletzt aktualisiert 2016-19-05 um 02:01