Martin Wilhelm



Organisation


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


Publications (Download BibTeX)


Wilhelm, M., Syväjärvi, M., & Wellmann, P. (2017). Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence. Advanced Materials Proceedings, 2(12), 769-773. https://dx.doi.org/10.5185/amp.2017/415
Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2017). Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers. Journal of Crystal Growth, 478, 159-162. https://dx.doi.org/10.1016/j.jcrysgro.2017.09.002
Wilhelm, M., Rieth, M., Brandl, M., Wibowo, R.A., Hock, R., & Wellmann, P. (2015). Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C. Thin Solid Films, 577, 88-93. https://dx.doi.org/10.1016/j.tsf.2015.01.049
Jokubavicius, V., Yazdi, G.R., Liljedahl, R., Ivanov, I.G., Sun, J., Liu, X.,... Syväjärvi, M. (2015). Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates. Crystal Growth & Design, 15, 2940-2947. https://dx.doi.org/10.1021/acs.cgd.5b00368
Wilhelm, M., Beck, F., & Wellmann, P. (2015). Towards the growth of SiGeC epitaxial layers for the application in Si solar cells. Energy Procedia, 84, 236-241. https://dx.doi.org/10.1016/j.egypro.2015.12.319
Wilhelm, M., Kaiser, M., Jokubavicius, V., Syväjärvi, M., Ou, Y., Ou, H., & Wellmann, P. (2013). Photoluminescence topography of fluorescent SiC and its corresponding source crystals. Materials Science Forum, 740-742, 421-424. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.421

Last updated on 2018-22-08 at 23:51