Martin Wilhelm



Organisation


Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Lehrstuhl für Werkstoffwissenschaften (Materialien der Elektronik und der Energietechnologie)


Publications (Download BibTeX)


Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2017). Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers. Journal of Crystal Growth, 478, 159-162. https://dx.doi.org/10.1016/j.jcrysgro.2017.09.002
Wilhelm, M., Syväjärvi, M., & Wellmann, P. (2017). Investigation of deep electronic levels in n‐type and p‐type 3C‐SiC using photoluminescence. Advanced Materials Proceedings, 2(12), 769-773. https://dx.doi.org/10.5185/amp.2017/415
Jokubavicius, V., Yazdi, G.R., Liljedahl, R., Ivanov, I.G., Sun, J., Liu, X.,... Syväjärvi, M. (2015). Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates. Crystal Growth & Design, 15, 2940-2947. https://dx.doi.org/10.1021/acs.cgd.5b00368
Wilhelm, M., Beck, F., & Wellmann, P. (2015). Towards the growth of SiGeC epitaxial layers for the application in Si solar cells. Energy Procedia, 84, 236-241. https://dx.doi.org/10.1016/j.egypro.2015.12.319
Wilhelm, M., Rieth, M., Brandl, M., Wibowo, R.A., Hock, R., & Wellmann, P. (2015). Optimization of growth parameters for growth of high quality heteroepitaxial 3C-SiC films at 1200 degrees C. Thin Solid Films, 577, 88-93. https://dx.doi.org/10.1016/j.tsf.2015.01.049
Wilhelm, M., Kaiser, M., Jokubavicius, V., Syväjärvi, M., Ou, Y., Ou, H., & Wellmann, P. (2013). Photoluminescence topography of fluorescent SiC and its corresponding source crystals. In Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein (Eds.), Materials Science Forum (Volumes 740-742) (pp. 421-424). St. Petersburg, RU: Switzerland: Trans Tech Publications.

Last updated on 2016-05-05 at 05:20