Philip Hens


Graduiertenzentrum der FAU

Publications (Download BibTeX)

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Hens, P., Künecke, U., & Wellmann, P. (2009). Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum. Materials Science Forum, 600-603, 19-22.
Hens, P., Künecke, U., Konias, K., Hock, R., & Wellmann, P. (2009). Germanium Incorporation during PVT Bulk Growth of Silicon Carbide. Materials Science Forum, 615-617, 11-14.
Wellmann, P., Konias, K., Hens, P., Hock, R., & Magerl, A. (2009). In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction. Materials Science Forum, 615-617, 23-26.
Hens, P., Syvaejaervi, M., Oehlschläger, F., Wellmann, P., & Yakimova, R. (2009). P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates. Materials Science Forum, 615-617, 85-88.
Stockmeier, M., Sakwe, A., Hens, P., Wellmann, P., Hock, R., & Magerl, A. (2009). Thermal Expansion Coefficients of 6H Silicon Carbide. Materials Science Forum, 600-603, 517-520.
Wellmann, P., Müller, R., Sakwe, A., Künecke, U., Hens, P., Stockmeier, M.,... Pons, M. (2008). Bulk growth of SiC. Materials Research Society Symposium - Proceedings, 1069, 3-14.
Sakwe, A., Stockmeier, M., Hens, P., Müller, R., Queren, D., Künecke, U.,... Wellmann, P. (2008). Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution. physica status solidi (b), 245(7), 1239-1256.
Wellmann, P., Hens, P., Sakwe, A., Queren, D., Müller, R., Durst, K., & Göken, M. (2007). Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growth. Materials Science Forum, 556-557, 259-262.

Last updated on 2016-05-05 at 05:20