Philip Hens


Graduiertenzentrum der FAU

Publications (Download BibTeX)

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Schimmel, S., Kaiser, M., Jokubavicius, V., Ou, Y., Hens, P., Linnarsson, M.K.,... Wellmann, P. (2014). The role of defects in fluorescent silicon carbide layers grown by sublimation epitaxy. IOP Conference Series: Materials Science and Engineering, 56.
Hupfer, T., Hens, P., Kaiser, M., Jokubavicius, V., Syväjärvi, M., & Wellmann, P. (2013). Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy. Materials Science Forum, 740-742, 52-55.
Jokubavicius, V., Kaiser, M., Hens, P., Wellmann, P., Liljedahl, R., Yakimova, R., & Syväjärvi, M. (2013). Morphological and optical stability in growth of fluorescent SiC on low off-axis substrates. Materials Science Forum, 740-742, 19-22.
Schimmel, S., Kaiser, M., Hens, P., Jokubavicius, V., Liljedahl, R., Sun, J.,... Syväjärvi, M. (2013). Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates. Materials Science Forum, 740-742, 185-188.
Hens, P., Wagner, G., Hölzing, A., Hock, R., & Wellmann, P. (2012). Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100). Thin Solid Films, 522, 2-6.
Jokubavicius, V., Hens, P., Liljedahl, R., Sun, J.W., Kaiser, M., Wellmann, P.,... Syväjärvi, M. (2012). Effects of source material on epitaxial growth of fluorescent SiC. Thin Solid Films, 522, 7-10.
Vasiliauskas, R., Marinova, M., Hens, P., Wellmann, P., Syvajarvi, M., & Yakimova, R. (2012). Nucleation Control of Cubic Silicon Carbide on 6H-Substrates. Crystal Growth & Design, 12(1), 197-204.
Hens, P., Mueller, J., Fahlbusch, L., Spiecker, E., Wellmann, P., & Spiecker, E. (2011). Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy. Materials Science Forum, 679-680, 127-130.
Hens, P., Wagner, G., Hölzing, A., Hock, R., & Wellmann, P. (2010). Fundamental study of the temperature ramp-up influence for 3C-SiC hetero-epitaxy on silicon (100). Materials Science Forum, 645-648, 151-154.
Hock, R., Konias, K., Perdicaro, L.M.S., Magerl, A., Hens, P., & Wellmann, P. (2010). Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction. Materials Science Forum, 645-648, 29-32.

Last updated on 2016-05-05 at 05:20