Florian Krach



Organisationseinheit


Lehrstuhl für Elektronische Bauelemente


Erfindung/en


Halbleiterbauelement
Realisierung eines monolithischen integrierten elektronischen Schaltkreises auf der Basis epitaktischen Graphens auf Siliziumkarbid


Publikationen (Download BibTeX)


Krach, F., Heckel, T., Frey, L., Bauer, A., Erlbacher, T., & März, M. (2016). Innovative Monolithic RC-Snubber for Fast Switching Power Modules. In Proceedings of the 9th International Conference on Integrated Power Electronics Systems (CIPS).
Krach, F., Thielen, N., Heckel, T., Bauer, A., Erlbacher, T., Frey, L., & Heckel, T. (2016). Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability. Device Research Conference (DRC), 2016 74th Annual.
Krach, F., Schwarzmann, H., Bauer, A., Erlbacher, T., & Frey, L. (2015). Silicon nitride, a high potential dielectric for 600 v integrated RC-snubber applications. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 33(1). https://dx.doi.org/10.1116/1.4906082
Erlbacher, T., Schwarzmann, H., Krach, F., Bauer, A.J., Berberich, S.E., Kasko, I., & Frey, L. (2014). Reliability of monolithic RC-snubbers in MOS-based power modules. In Proceedings of the 5th Electronics System-Integration Technology Conference, ESTC 2014. Institute of Electrical and Electronics Engineers Inc..
Krach, F., Hertel, S., Waldmann, D., Jobst, J., Krieger, M., Reshanov, S.,... Weber, H.B. (2012). A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel. Applied Physics Letters, 100, 122102. https://dx.doi.org/10.1063/1.3695157

Zuletzt aktualisiert 2016-05-05 um 05:11