Lehrstuhl für Elektronische Bauelemente

Address:
Cauerstraße 6
91058 Erlangen



Subordinate Organisational Units

Professur für Elektronische Bauelemente


Research Fields

Silicon Semiconductor Technology
Wide-Bandgap Devices
Anorganische Dünnschichtelektronik


Related Project(s)

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ERASE: Erforschung der Oberflächenpräparation und der Rückgewinnung von Aluminiumnitrid-Substraten
Dr. Elke Meißner
(01/03/2019 - 28/02/2022)


Emerging Talents: Herstellung und Charakterisierung von Heterostrukturen aus 2D Materialien
Dr.-Ing. Andreas Hutzler
(15/01/2019 - 14/01/2020)


FR 713/14-1: Atomic layer deposition of dopant source layers for semiconductor doping - Characterization and modelling of drive-in processes
Peter Pichler
(02/10/2017 - 30/09/2019)


Entwicklung eines PDMS-basierten Mikrofluidiksystems
Prof. Dr. Lothar Frey
(01/01/2017)


(SPP 1796: High Frequency Flexible Bendable Electronics for Wireless Communication Systems (FFLexCom)):
FFlexCom: Thin-Film Transistors with Novel Architecture for RF Circuits and Systems
Prof. Dr. Lothar Frey; Prof. Dr.-Ing. Robert Weigel
(01/06/2016 - 30/05/2019)



Publications (Download BibTeX)

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Saggio, M., Montandon, C., Bourenkov, A., Frey, L., & Pichler, P. (1997). Distortion of sims profiles due to ion beam mixing. Radiation Effects and Defects in Solids, 141, 37-52. https://dx.doi.org/10.1080/10420159708211555
Biró, L., Gyulai, J., Havancsák, K., Didyk, A., Frey, L., & Ryssel, H. (1997). In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 32-37. https://dx.doi.org/10.1016/S0168-583X(96)01106-8
Schwenke, H., Knoth, J., Fabry, L., Pahlke, S., Scholz, R., & Frey, L. (1997). Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry. Journal of the Electrochemical Society, 144(11), 3979-3983. https://dx.doi.org/10.1149/1.1838122
Park, Y., Takai, M., Nagai, T., Kishimoto, T., Lehrer, C., Frey, L., & Ryssel, H. (1997). Microanalysis of impurity contamination in masklessly etched area using focused ion beam. Japanese Journal of Applied Physics, 36, 7712-7716.
Biró, L., Gyulai, J., Havancsák, K., Didyk, A., Bogen, S., Frey, L., & Ryssel, H. (1997). New method based on atomic force microscopy for in-depth characterization of damage in Si irraadiate with 209 MeV Kr. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 122(3), 559-562. https://dx.doi.org/10.1016/S0168-583X(96)00662-3
Jiao, G., Bogen, S., Frey, L., & Ryssel, H. (1996). A multi-laminate wire mesh ionizer for a Cs sputter negative ion source. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 382, 332-334. https://dx.doi.org/10.1016/S0168-9002(96)00701-2
Bogen, S., Herden, M., Frey, L., & Ryssel, H. (1996). Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon. In Ishida E.; Mehta S.; Banerjee S.; Current M.; Smith T.C.; et al (Eds.), Proceedings of the 1996 11th International Conference on Ion Implantation Technology (pp. 792-795). Austin, TX, USA: Piscataway, NJ, United States: IEEE.
Lipp, S., Frey, L., Lehrer, C., Demm, E., Pauthner, S., & Ryssel, H. (1996). A comparison of focused ion beam and electron beam induced deposition processes. Microelectronics Reliability, 36, 1779-1782.
Lipp, S., Frey, L., Lehrer, C., Frank, B., Demm, E., & Ryssel, H. (1996). Investigations on the topology of structures milled and etched by focused ion beams. Journal of Vacuum Science & Technology B, 14(6), 3996-3999.
Frey, L., Bogen, S., Herden, M., & Ryssel, H. (1996). Deep implants for semiconductor device applications. Radiation Effects and Defects in Solids, 140(1), 87-101. https://dx.doi.org/10.1080/10420159608212943
Lipp, S., Frey, L., Lehrer, C., Frank, B., Demm, E., Pauthner, S., & Ryssel, H. (1996). Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition. Journal of Vacuum Science & Technology B, 14(6), 3920-3923.
Gong, L., Petersen, S., Frey, L., & Ryssel, H. (1995). Improved delineation technique for two dimensional dopant profiling. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 96, 133-138. https://dx.doi.org/10.1016/0168-583X(94)00472-2
Frey, L., Ryssel, H., Bogen, S., Hobler, G., & Simionescu, A. (1995). Model for the electronic stopping of channeled ions in silicon around the stopping power maximum. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 106, 47-50. https://dx.doi.org/10.1016/0168-583X(95)00676-1
Lipp, S., Frey, L., Franz, G., Demm, E., Petersen, S., & Ryssel, H. (1995). Local material removal by focused ion beam milling and etching. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 106, 630-635. https://dx.doi.org/10.1016/0168-583X(95)00778-4
Bogen, S., Körber, K., Gong, L., Frey, L., & Ryssel, H. (1995). Comparison of retrograde and conventional p-wells in regard of latch-up susceptibility. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 96, 411-415. https://dx.doi.org/10.1016/0168-583X(94)00530-3
Biró, L., Gyulai, J., Bogen, S., Frey, L., & Ryssel, H. (1994). Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 85, 925-928. https://dx.doi.org/10.1016/0168-583X(94)95952-8
Gong, L., Bogen, S., Frey, L., Jung, W., & Ryssel, H. (1994). Analytical description of high energy implantation profiles of boron and phosphorus into crystalline silicon. Radiation Effects and Defects in Solids, 127, 385-395. https://dx.doi.org/10.1080/10420159408221046
Ryssel, H., Biró, L., Frey, L., Kuki, A., Kormány, T., Serfozo, G., & Khanh, N. (1994). Athermal effects in ion implanted layers.
Frey, L., Pichler, P., Kasko, I., Thies, I., Lipp, S., Streckfuss, N.,... Ryssel, H. (1994). Practical aspects of ion beam analysis of semiconductor structures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 85, 356-362. https://dx.doi.org/10.1016/0168-583X(94)95844-0
Biró, L., Gyulai, J., Ryssel, H., Frey, L., Kormány, T., Tuan, N., & Horváth, z. (1993). Photon assisted implantation (PAI). Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 80-81 Part. 1, 607-611. https://dx.doi.org/10.1016/0168-583X(93)96191-E


Publications in addition (Download BibTeX)


Stolzke, T., Dirnecker, T., Schwarz, J., & Frey, L. (2018). Investigation of magnetic properties from a manganese–zinc–ferrite polymer bonded material. International Journal of Applied Electromagnetics and Mechanics, Pre-press(Pre-press), 1-8. https://dx.doi.org/10.3233/JAE-171244

Last updated on 2019-24-04 at 10:18