Lehrstuhl für Elektronische Bauelemente

Address:
Cauerstraße 6
91058 Erlangen



Subordinate Organisational Units

Professur für Elektronische Bauelemente


Research Fields

Silicon Semiconductor Technology
Wide-Bandgap Devices
Anorganische Dünnschichtelektronik


Related Project(s)

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Charge compensation in 4H silicon carbide - Simulation, modelling and experimental verification
PD Dr. Tobias Erlbacher
(01/04/2016 - 14/04/2019)


Printable soft magnetic polymers for power electronics
Prof. Dr. Lothar Frey
(01/01/2016)


Koppelkondensatoren: Realisierung von Koppelkondensatoren für Betriebsspannungen über 1200V durch Integration von Parallelwiderständen
Prof. Dr. Lothar Frey
(01/01/2016 - 15/02/2017)


(Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7nm Node):
SUPERAID7: Stability Under Process Variability for Advanced Interconnects and Devices Beyond 7 nm node
Prof. Dr. Lothar Frey; Dr. Jürgen Lorenz
(01/01/2016 - 31/12/2018)


Leistungszentrum Elektroniksysteme (LZE), Teilprojekt 2: "Robuste Gestaltung induktiver Energieüberträger für bewegte Anwendungen"
Prof. Dr. Lothar Frey
(01/01/2015 - 30/06/2017)



Publications (Download BibTeX)

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Bogen, S., Gong, L., Frey, L., & Ryssel, H. (1993). High energy implantation of 10B and 11B into (100) silicon in channel and in random direction. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 659-662. https://dx.doi.org/10.1016/0168-583X(93)96203-O
Frey, L., Ergele, W., Falter, T., Gong, L., & Ryssel, H. (1993). Analysis of microstructured samples by focused ion beam sample preparation. Microelectronic Engineering, 21, 375-378. https://dx.doi.org/10.1016/0167-9317(93)90095-M
Gong, L., Bogen, S., Frey, L., Jung, W., & Ryssel, H. (1992). Simulation of high energy implantation profiles in crystalline silicon. Microelectronic Engineering, 5435146,, 495-498. https://dx.doi.org/10.1016/0167-9317(92)90482-7
Frey, L., Kroninger, F., Streckfusse, N., Ryssel, H., & Margail, J. (1992). Characterization of metal impurities in silicon-on-insulator material. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 12, 195-198. https://dx.doi.org/10.1016/0921-5107(92)90285-H
Streckfusse, N., Frey, L., Zielonka, G., Kroninger, F., Ryzlewicz, C., & Ryssel, H. (1992). Analysis of trace metals on silicon surfaces. Fresenius Zeitschrift für Analytische Chemie, 343, 765-768. https://dx.doi.org/10.1007/BF00633562
Antos, L., Gyulai, J., Khanh, N., & Frey, L. (1992). End-of-range disorder influenced by inherent oxygen in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 71(4), 399-405. https://dx.doi.org/10.1016/0168-583X(92)95357-W
Frey, L., Bogen, S., Gong, L., Jung, W., Ryssel, H., & Gyulai, J. (1992). High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62(3), 410-415. https://dx.doi.org/10.1016/0168-583X(92)95267-U
Gyulai, J., Frey, L., Ryssel, H., & Khanh, N. (1991). Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon. Journal of Materials Research, 6(8), 1695-1700. https://dx.doi.org/10.1557/JMR.1991.1695
Oechsner, R., Kluge, A., Frey, L., & Ryssel, H. (1991). Tribological properties of carbonized photoresist. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 793-797. https://dx.doi.org/10.1016/0168-583X(91)95706-J


Publications in addition (Download BibTeX)


Stolzke, T., Dirnecker, T., Schwarz, J., & Frey, L. (2018). Investigation of magnetic properties from a manganese–zinc–ferrite polymer bonded material. International Journal of Applied Electromagnetics and Mechanics, Pre-press(Pre-press), 1-8. https://dx.doi.org/10.3233/JAE-171244

Last updated on 2019-24-04 at 10:18