Lehrstuhl für Elektronische Bauelemente

Address:
Cauerstraße 6
91058 Erlangen



Subordinate Organisational Units

Professur für Elektronische Bauelemente


Research Fields

Silicon Semiconductor Technology
Wide-Bandgap Devices
Anorganische Dünnschichtelektronik


Related Project(s)

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ERASE: Erforschung der Oberflächenpräparation und der Rückgewinnung von Aluminiumnitrid-Substraten
Dr. Elke Meißner
(01/03/2019 - 28/02/2022)


Emerging Talents: Herstellung und Charakterisierung von Heterostrukturen aus 2D Materialien
Dr.-Ing. Andreas Hutzler
(15/01/2019 - 14/01/2020)


FR 713/14-1: Atomic layer deposition of dopant source layers for semiconductor doping - Characterization and modelling of drive-in processes
Peter Pichler
(02/10/2017 - 30/09/2019)


Entwicklung eines PDMS-basierten Mikrofluidiksystems
Prof. Dr. Lothar Frey
(01/01/2017)


(SPP 1796: High Frequency Flexible Bendable Electronics for Wireless Communication Systems (FFLexCom)):
FFlexCom: Thin-Film Transistors with Novel Architecture for RF Circuits and Systems
Prof. Dr. Lothar Frey; Prof. Dr.-Ing. Robert Weigel
(01/06/2016 - 30/05/2019)



Publications (Download BibTeX)

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Hutzler, A., Fritsch, B., Jank, M., Branscheid, R., Martens, R., Spiecker, E., & März, M. (2019). In Situ Liquid Cell TEM Studies on Etching and Growth Mechanisms of Gold Nanoparticles at a Solid-Liquid-Gas Interface. Advanced Materials Interfaces. https://dx.doi.org/10.1002/admi.201901027
Beljakowa, S., Pichler, P., Kalkofen, B., & Hübner, R. (2019). Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon. physica status solidi (a), 216(17). https://dx.doi.org/10.1002/pssa.201900306
Rattmann, G., Pichler, P., & Erlbacher, T. (2019). On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics. physica status solidi (a), 216. https://dx.doi.org/10.1002/pssa.201900167
Erlekampf, J., Kallinger, B., Weiße, J., Rommel, M., Berwian, P., Friedrich, J., & Erlbacher, T. (2019). Deeper insight into lifetime-engineering in 4H-SiC by ion implantation. Journal of Applied Physics, 126(4). https://dx.doi.org/10.1063/1.5092429
Hutzler, A., Fritsch, B., Jank, M.P.M., Branscheid, R., Spiecker, E., & März, M. (2019). Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy. Journal of Visualized Experiments, 149. https://dx.doi.org/10.3791/59751
Schriefer, T., & Hofmann, M. (2019). A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices. Microelectronics Reliability, 98, 86-94. https://dx.doi.org/10.1016/j.microrel.2019.04.001
Weiße, J., Hauck, M., Krieger, M., Bauer, A.J., & Erlbacher, T. (2019). Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440). AIP Advances, 9(7). https://dx.doi.org/10.1063/1.5118666
Weiße, J., Hauck, M., Krieger, M., Bauer, A., & Erlbacher, T. (2019). Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC. AIP Advances, 9(5), 055308. https://dx.doi.org/10.1063/1.5096440
Matthus, C.D., Di Benedetto, L., Kocher, M., Bauer, A.J., Licciardo, G.D., Rubino, A., & Erlbacher, T. (2019). Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K. IEEE Sensors Journal, 19(8), 2871-2878. https://dx.doi.org/10.1109/JSEN.2019.2891293
Hutzler, A., Matthus, C., Dolle, C., Rommel, M., Jank, M.P.M., Spiecker, E., & Frey, L. (2019). Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy. Journal of Physical Chemistry C, 123, 9192 - 9201. https://dx.doi.org/10.1021/acs.jpcc.9b00957
Schriefer, T., Hofmann, M., Rauh, H., Eckardt, B., & März, M. (2019). Parameter study on the electrical contact resistance of axially canted coil springs for high-current systems. In IEEE (Eds.), Proceedings of the 2018 29th International Conference on Electrical Contacts together with 64th IEEE Holm Conference on Electrical Contacts. Albuquerque, NM, US.
Weiße, J., Mitlehner, H., Frey, L., & Erlbacher, T. (2019). Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 629-632). Birmingham, GB: Trans Tech Publications Ltd.
Rusch, O., Moult, J., & Erlbacher, T. (2019). Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 549-552). Birmingham, GB: Trans Tech Publications Ltd.
Schlichting, H., Sledziewski, T., Bauer, A.J., & Erlbacher, T. (2019). Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 763-767). Birmingham, GB: Trans Tech Publications Ltd.
Matthus, C.D., Bauer, A.J., Frey, L., & Erlbacher, T. (2019). Wavelength-selective 4H-SiC UV-sensor array. Materials Science in Semiconductor Processing, 90, 205-211. https://dx.doi.org/10.1016/j.mssp.2018.10.019
Di Benedetto, L., Matthus, C., Erlbacher, T., Bauer, A.J., Licciardo, G.D., Rubino, A., & Frey, L. (2019). Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 572-575). Birmingham, GB: Trans Tech Publications Ltd.
Kocher, M., Yao, B., Weiße, J., Rommel, M., Xu, Z.W., Erlbacher, T., & Bauer, A. (2019). Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 445-448). Birmingham, GB: Trans Tech Publications Ltd.
Śledziewski, T., Erlbacher, T., Bauer, A., Frey, L., Chen, X., Zhao, Y.,... Dai, X. (2019). Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 490-493). Birmingham, GB: Trans Tech Publications Ltd.
Weiße, J., Hauck, M., Sledziewski, T., Krieger, M., Bauer, A., Mitlehner, H.,... Erlbacher, T. (2019). On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements. In Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Eds.), Materials Science Forum (pp. 433-436). Birmingham, GB: Trans Tech Publications Ltd.
Stolzke, T., Dirnecker, T., Schwarz, J., & Frey, L. (2019). Investigation of magnetic properties from a manganese-zinc-ferrite polymer bonded material. International Journal of Applied Electromagnetics and Mechanics, 59(1), 97-104. https://dx.doi.org/10.3233/JAE-171244


Publications in addition (Download BibTeX)


Stolzke, T., Dirnecker, T., Schwarz, J., & Frey, L. (2018). Investigation of magnetic properties from a manganese–zinc–ferrite polymer bonded material. International Journal of Applied Electromagnetics and Mechanics, Pre-press(Pre-press), 1-8. https://dx.doi.org/10.3233/JAE-171244

Last updated on 2019-24-04 at 10:18