Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Address:
Martensstraße 5/7
91058 Erlangen


Related Project(s)

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Entwicklung eines Wachstumsprozesses für SiC-Wafer mit Durchmessern größer 10cm unter Anwendung der neuen SiC-Quellenmaterialien
Prof. Dr.-Ing. Peter Wellmann
(20/12/2018 - 31/05/2020)


Quantitative Charakterisierung und Vorhersage von Versetzungsverhalten in hochreinem SiC
Prof. Dr.-Ing. Peter Wellmann
(01/01/2018 - 31/12/2020)


MYCIGS: Energieertragsoptimierte Cu (In, Ga) (S,Se) 2-Dünnschichtsolarmodule durch gezielte Steuerung der Ertragsparameter Materialwissenschaftliche Charakterisierung
Prof. Dr.-Ing. Peter Wellmann
(01/10/2017 - 30/09/2020)


(CHALLENGE):
CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01/01/2017 - 31/12/2020)


Analysis of the growth kinetics during high temperature crystal growth of SiC using computed tomography for the in-situ 3D visualization of the growth interface
Prof. Dr.-Ing. Peter Wellmann
(01/05/2016 - 30/04/2019)



Publications (Download BibTeX)

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Yakimova, R., Ivanov, I.G., Vines, L., Linnarsson, M.K., Gällström, A., Giannazzo, F.,... Jokubavicius, V. (2017). Growth, defects and doping of 3C-SiC on hexagonal polytypes. ECS Journal of Solid State Science and Technology, 6(10), P741-P745. https://dx.doi.org/10.1149/2.0281710jss
Schöler, M., Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Characterization of protrusions and stacking faults in 3C-SiC grown by sublimation epitaxy using 3C-SiC-on-Si seeding layers. Advanced Materials Proceedings, 2(12), 774-778. https://dx.doi.org/10.5185/amp.2017/419
Wellmann, P. (2017). Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond. Zeitschrift fur Anorganische und Allgemeine Chemie, 643(21), 1312-1322. https://dx.doi.org/10.1002/zaac.201700270
Schimmel, S., Koch, M., Macher, P., Kimmel, A.-C., Steigerwald, T., Alt, N.,... Wellmann, P. (2017). Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers. Journal of Crystal Growth, 479, 59-66. https://dx.doi.org/10.1016/j.jcrysgro.2017.09.027
Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Thermally Stimulated Luminescence in 6H Fluorescent SiC. In Proceedings of the International Conference on Silicon Carbide and Related Materials. Washington, DC, US.
Wei, Y., Künecke, U., Wellmann, P., & Ou, H. (2017). Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence. In Proceedings of the 5th international workshop on LED and Solar Applications. Lyngby, DK.
Schuh, P., Schöler, M., Wilhelm, M., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2017). Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers. Journal of Crystal Growth, 478, 159-162. https://dx.doi.org/10.1016/j.jcrysgro.2017.09.002
Häusler, J., Schimmel, S., Wellmann, P., & Schnick, W. (2017). Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging. Chemistry - A European Journal, 23(50), 12275-12282. https://dx.doi.org/10.1002/chem.201701081
Schuh, P., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). 3C-sic bulk sublimation growth on CVD hetero-epitaxial seeding layers. Materials Science Forum, 897, 15-18. https://dx.doi.org/10.4028/www.scientific.net/MSF.897.15
Wei, Y., Künecke, U., Jokubavicius, V., Syväjärvi, M., Wellmann, P., & Ou, H. (2017). Low Temperature Photoluminescence of 6H fluorescent SiC. In Proceedings of the E-MRS Spring Meeting 2017. Strasbourg, FR.
Stroth, C., Sayed, M.H., Schuster, M., Ohland, J., Hammer-Riedel, I., Hammer, M.S.,... Gütay, L. (2017). Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates. Journal of Materials Science: Materials in Electronics, 1-9. https://dx.doi.org/10.1007/s10854-017-6467-8
Schuh, P., Arzig, M., Litrico, G., La Via, F., Mauceri, M., & Wellmann, P. (2017). Growing bulk-like 3C-SiC from seeding material produced by CVD. physica status solidi (a). https://dx.doi.org/10.1002/pssa.201600429
Stroth, C., Sayed, M.H., Schuster, M., Ohland, J., Hammer-Riedel, I., Hammer, M.S.,... Gütay, L. (2016). Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy. Journal of Materials Science: Materials in Electronics, 1-9, 506-511. https://dx.doi.org/10.1109/PVSC.2016.7749646
Syväjärvi, M., Ma, Q., Jokubavicius, V., Galeckas, A., Sun, J., Liu, X.,... Svensson, B.G. (2016). Cubic silicon carbide as a potential photovoltaic material. Solar Energy Materials and Solar Cells, 145, 104-108. https://dx.doi.org/10.1016/j.solmat.2015.08.029
Wellmann, P., Fahlbusch, L., Salamon, M., & Uhlmann, N. (2016). Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions. Materials Science Forum, 858, 49-52. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.49
Schuh, P., Vecera, P., Hirsch, A., Syväjärvi, M., Litrico, G., La Via, F.,... Wellmann, P. (2016). Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates. Materials Science Forum, 858, 89-92. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.89
Sun, J., Jokubavicius, V., Gao, L., Booker, I., Jansson, M., Liu, X.,... Syväjärvi, M. (2016). Solar driven energy conversion applications based on 3C-SiC. Materials Science Forum, 858, 1028-1031. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.1028
Schuster, M., Wernicke, T., Möckel, S., & Wellmann, P. (2016). Determination of the Molar Extinction Coefficient of Colloidal Selenium for Optical Characterization of Stabilized Nanoparticulate Dispersions. International Journal of Nanoparticles and Nanotechnology, 2:006.
Fahlbusch, L., Schöler, M., Mattle, P., Schnitzer, S., Khodamoradi, H., Iwamoto, N.,... Wellmann, P. (2016). High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C. Materials Science Forum, 858, 33-36. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.33
Schimmel, S., Künecke, U., Meisel, M., Hertweck, B., Steigerwald, T., Nebel, C.,... Wellmann, P. (2016). Chemical stability of carbon-based inorganic materials for in situ x-ray investigations of ammonothermal crystal growth of nitrides. Journal of Crystal Growth, 456, 33-42. https://dx.doi.org/10.1016/j.jcrysgro.2016.08.067

Last updated on 2019-24-04 at 10:30