Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Adresse:
Martensstraße 5/7
91058 Erlangen


Forschungsprojekt(e)

Go to first page Go to previous page 1 von 2 Go to next page Go to last page

Entwicklung eines Wachstumsprozesses für SiC-Wafer mit Durchmessern größer 10cm unter Anwendung der neuen SiC-Quellenmaterialien
Prof. Dr.-Ing. Peter Wellmann
(20.12.2018 - 31.05.2020)


Quantitative Charakterisierung und Vorhersage von Versetzungsverhalten in hochreinem SiC
Prof. Dr.-Ing. Peter Wellmann
(01.01.2018 - 31.12.2020)


MYCIGS: Energieertragsoptimierte Cu(In,Ga)(S,Se)2-Dünnschichtsolarmodule durch gezielte Steuerung der Ertragsparameter Materialwissenschaftliche Charakterisierung
Prof. Dr.-Ing. Peter Wellmann
(01.10.2017 - 30.09.2020)


(CHALLENGE):
CHALLENGE: 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices
Prof. Dr.-Ing. Peter Wellmann
(01.01.2017 - 31.12.2020)


Analyse der Wachstumskinetik während der Hochtemperatur-Kristallzüchtung von SiC unter Anwendung der Computertomographie zur in-situ 3D Visualisierung der Wachstumsphasengrenze
Prof. Dr.-Ing. Peter Wellmann
(01.05.2016 - 30.04.2019)



Publikationen (Download BibTeX)

Go to first page Go to previous page 11 von 12 Go to next page Go to last page

Straubinger, T., Bickermann, M., Hofmann, H.-D., Weingärtner, R., Wellmann, P., & Winnacker, A. (2001). Stability criteria for 4H-SiC bulk growth. Materials Science Forum, 353-356, 25-28. https://dx.doi.org/10.4028/www.scientific.net/MSF.353-356.25
Wellmann, P. (2001). Sublimations-Kristallzüchtung von Siliziumkarbid: Visualisierung und Modellbildung, Habilitationsschrift Universität Erlangen-Nürnberg. Aachen: Shaker Verlag.
Wellmann, P., Bickermann, M., Hofmann, H.-D., Kadinski, L., Selder, M., Straubinger, T., & Winnacker, A. (2000). In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging. Journal of Crystal Growth, 216(1-4), 263-272. https://dx.doi.org/10.1016/S0022-0248(00)00372-9
Straubinger, T., Bickermann, M., Grau, M., Hofmann, H.-D., Kadinski, L., Müller, G.,... Winnacker, A. (2000). Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions. Materials Science Forum, 338-342, 39-42. https://dx.doi.org/10.4028/www.scientific.net/MSF.338-342.39
Wellmann, P., Bickermann, M., Hofmann, H.-D., Kadinski, L., Selder, M., Straubinger, T., & Winnacker, A. (2000). Digital x-ray imaging of SiCPVT process: Analysis of crystal growth and powder source degradation. Materials Science Forum, 338-342, 71-74. https://dx.doi.org/10.4028/www.scientific.net/MSF.338-342.71
Winnacker, A., Hofmann, H.-D., & Wellmann, P. (2000). Silicon carbide as a semiconductor material for high temperature, high power and optoelectronics. In Proceedings of the third Vietnam-German Workshop on Physics and Engineering. Ho Chi Minh City, VN.
Selder, M., Kadinski, L., Durst, F., Straubinger, T., Hofmann, H.-D., & Wellmann, P. (2000). Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth. Materials Science Forum, 338-342, 31-34. https://dx.doi.org/10.4028/www.scientific.net/MSF.338-342.31
Selder, M., Kadinski, L., Makarov, Y., Durst, F., Wellmann, P., Straubinger, T.,... Ramm, M. (2000). Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT. Journal of Crystal Growth, 211(1), 333-338. https://dx.doi.org/10.1016/S0022-0248(99)00853-2
Hofmann, H.-D., Schmitt, E., Bickermann, M., Kölbl, M., Wellmann, P., & Winnacker, A. (1999). Analysis on defect generation during the SiC bulk growth process. Materials Science and Engineering B-Advanced Functional Solid-State Materials, B61-62, 48-53. https://dx.doi.org/10.1016/S0921-5107(98)00443-7
Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1999). Giant magnetoresistance effect in a new hybrid granular ferromagnet semiconductor system - MnAs nanomagnets imbedded in LT-GaAs. In The physics of semiconductors – World Scientific, proceedings of ICPS24th conference (1999). Helsinki, FI.
Wellmann, P., Bickermann, M., Grau, M., Hofmann, H.-D., Straubinger, T., & Winnacker, A. (1999). Online monitoring of PVT SiC bulk crystal growth using digital x-ray imaging. Materials Research Society Symposium - Proceedings, 572, 259-264. https://dx.doi.org/10.1557/PROC-572-259
Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1998). Giant magnetoresistance in a low-temperature GaAs/MnAs nanoscale ferromagnet hybrid structure. Applied Physics Letters, 73(22), 3291-3293. https://dx.doi.org/10.1063/1.122748
Schmidt, K., Kunze, U., Medeiros-Ribeiro, G., Garcia, J., Wellmann, P., & Petroff, P. (1998). Field dependent carrier dynamics and charged excitons in InAs self-assembled quantum dots. Physica E-Low-Dimensional Systems & Nanostructures, 2(1-4), 627-631. https://dx.doi.org/10.1016/S1386-9477(98)00128-3
Garcia, J., Mankad, T., Holtz, O., Wellmann, P., & Petroff, P. (1998). Electronic states tuning of InAs self-assembled quantum dots. Applied Physics Letters, 72(24), 3172-3174. https://dx.doi.org/10.1063/1.121583
Wellmann, P., Schoenfeld, W., Garcia, J., & Petroff, P. (1998). Tuning of electronic states in self-assembled InAs quantum dots using an ion implantation technique. Journal of Electronic Materials, 27(9), 1030-1033. https://dx.doi.org/10.1007/s11664-998-0158-4
Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1998). Giant magnetoresistance in a low-temperature grown GaAs with imbedded MnAs nanomagnets. In Physics of Microstructured Semiconductors, Vol.6.
Van Esch, A., Van Bockstal, L., De Boeck, J., Verbanck, G., Van Steenbergen, A., Wellmann, P.,... Borghs, G. (1997). Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs. Physical Review B, 56(20), 13103-13112.
Wellmann, P., Garcia, J., Feng, J.-L., & Petroff, P. (1997). Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs. Applied Physics Letters, 71(17), 2532-2534. https://dx.doi.org/10.1063/1.120109
Wellmann, P., Feng, J.-L., Garcia, J., & Petroff, P. (1997). Formation and properties of nanosize ferromagnetic MnAs particles in low temperature GaAs by manganese implantation. Materials Research Society Symposium - Proceedings, 475, 49-54. https://dx.doi.org/10.1557/PROC-475-49
Wellmann, P., Winnacker, A., & Pensl, G. (1996). On the excitation mechanism of erbium and ytterbium in the quaternary compounds InGaAsP. Materials Research Society Symposium - Proceedings, 422, 255-266. https://dx.doi.org/10.1557/PROC-422-255

Zuletzt aktualisiert 2019-24-04 um 10:30